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151010s1900 dcu o 000 0 eng d |
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|a EBLCP
|b eng
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|c EBLCP
|d OCLCQ
|d MERUC
|d OCLCQ
|d ZCU
|d ICG
|d OCLCO
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|d OCLCQ
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|d AU@
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|a 9780309596534
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|a 030959653X
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|a DEBBG
|b BV044107357
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|a (OCoLC)923265287
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|a TK7871.85
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|a 621.38152
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|a UAMI
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|a Staff, National Research Council.
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|a Materials for High-Temperature Semiconductor Devices.
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|a Washington :
|b National Academies Press,
|c 1900.
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| 300 |
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|a 1 online resource (136 pages)
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| 336 |
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
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|a Print version record.
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|a ""Materials For High-Temperature Semiconductor Devices""; ""Copyright""; ""Abstract""; ""Preface""; ""Acknowledgements""; ""Contents""; ""Executive Summary""; ""GENERAL CONCLUSIONS AND RECOMMENDATIONS""; ""Temperature Ranges""; ""U.S. Competitiveness""; ""Demonstration Technologies""; ""Funding Strategy""; ""MATERIALS-SPECIFIC CONCLUSIONS AND RECOMMENDATIONS""; ""Silicon Carbide""; ""Nitrides""; ""Diamond""; ""Packaging""; ""1 Background""; ""SURVEY I: APPLICATIONS OF HIGH-TEMPERATURE ELECTRONICS BY INDUSTRY""; ""Automotive""; ""Aerospace""; ""Gas Turbine Engines""
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| 505 |
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|a ""Other Aerospace Applications""""Space Vehicles And Exploration""; ""Nuclear Power""; ""Petroleum Exploration""; ""Industrial Process Control""; ""Power Electronics""; ""SURVEY II: APPLICATIONS BY THERMAL ENVIRONMENT""; ""SURVEY III: HIGH-TEMPERATURE ELECTORNIS APPLICATIONS BY COMPLEXITY""; ""SUMMARY""; ""2 State Of The Art Of Wide Bandgap Materials""; ""SILICON CARBIDE""; ""Materials Description And Properties""; ""Methods Of Fabrication""; ""Bulk Growth""; ""Background""; ""Current Status""; ""Epitaxial Growth""; ""Background""; ""CVD Of α-SiC Epitaxial Films""
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| 505 |
8 |
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|a ""SiC Epitaxy In The c-Axis Direction""""SiC Epitaxy In The a-Axis Direction""; ""Hetero-Epitaxial Growth Of 3C-SiC Films""; ""Other Epitaxial Processes""; ""Summary""; ""NITRIDE MATERIALS""; ""Properties""; ""Crystal Growth""; ""DIAMOND""; ""Materials Description And Properties""; ""Methods Of Synthesis And Characterization""; ""Synthesis""; ""Characterization""; ""Diamond Processing""; ""3 Device Physics: Behavior at Elevated Temperatures""; ""HIGH-TEMPERATURE EFFECTS: FUNDAMENTAL, MATERIALS-RELATED PROPERTIES""; ""Carrier Mobilities""
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| 505 |
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|a ""Intrinsic Carrier Concentrations: Dependence on Bandgap Energy and Temperature""""PREDICTING HIGH-TEMPERATURE-DEVICE PERFORMANCE: MATERIALS-RELATED FIGURES OF MERIT""; ""Device Physics At High Temperatures""; ""Junction Leakage: p-n Junctions And Diodes""; ""Schottky Leakage""; ""Threshold Voltage Shifts""; ""Choice Of High-Temperature-Device Technologies""; ""4 Generic Technical Issues Associated With Materials For High-Temperature Semiconductors""; ""ELECTRICAL CONTACTS""; ""Schottky Contacts To SiC""; ""Ohmic Contacts To SiC""; ""Ohmic Contacts To GaN""; ""DOPING AND IMPLANTATION""
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| 505 |
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|a ""Doping Of SiC""""Doping Of GaN""; ""Doping Of AlN""; ""Doping Of Diamond""; ""GATE OXIDES AND INSULATORS""; ""Gate Oxides And Insulators For SiC""; ""Gate Oxides And Insulators For The Nitrides""; ""Gate Oxides And Insulators For Diamond""; ""ETCHING""; ""Etching Of SiC""; ""Etching Of The Nitrides: GaN And AlN""; ""Etching Of Diamond""; ""DEFECT ENGINEERING AND CONTROL""; ""YIELD""; ""DEVICE RELIABILITY""; ""5 High-Temperature Electronic Packaging""; ""CHIP PACKAGING""; ""SUBSTRATES""; ""THICK-FILM AND THIN-FILM METALLIZATION""; ""COMPONENT ATTACHMENT""; ""INTERCONNECTION""
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|a ""Second-level packaging""
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| 590 |
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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| 650 |
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|a Semiconductors.
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| 650 |
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|a Materials at high temperatures.
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| 650 |
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|a Wide gap semiconductors.
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| 650 |
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2 |
|a Semiconductors
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| 650 |
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|a Semi-conducteurs.
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| 650 |
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6 |
|a Matériaux à hautes températures.
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| 650 |
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|a Semi-conducteurs à large bande interdite.
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| 650 |
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7 |
|a semiconductor.
|2 aat
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| 650 |
|
7 |
|a Materials at high temperatures
|2 fast
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| 650 |
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7 |
|a Semiconductors
|2 fast
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| 650 |
|
7 |
|a Wide gap semiconductors
|2 fast
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| 776 |
0 |
8 |
|i Print version:
|a Staff, National Research Council.
|t Materials for High-Temperature Semiconductor Devices.
|d Washington : National Academies Press, ©1900
|z 9780309053358
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| 856 |
4 |
0 |
|u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=3376651
|z Texto completo
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| 938 |
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|a ProQuest Ebook Central
|b EBLB
|n EBL3376651
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| 994 |
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|a 92
|b IZTAP
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