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Materials for High-Temperature Semiconductor Devices.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Washington :
National Academies Press,
1900.
|
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- ""Materials For High-Temperature Semiconductor Devices""; ""Copyright""; ""Abstract""; ""Preface""; ""Acknowledgements""; ""Contents""; ""Executive Summary""; ""GENERAL CONCLUSIONS AND RECOMMENDATIONS""; ""Temperature Ranges""; ""U.S. Competitiveness""; ""Demonstration Technologies""; ""Funding Strategy""; ""MATERIALS-SPECIFIC CONCLUSIONS AND RECOMMENDATIONS""; ""Silicon Carbide""; ""Nitrides""; ""Diamond""; ""Packaging""; ""1 Background""; ""SURVEY I: APPLICATIONS OF HIGH-TEMPERATURE ELECTRONICS BY INDUSTRY""; ""Automotive""; ""Aerospace""; ""Gas Turbine Engines""
- ""Other Aerospace Applications""""Space Vehicles And Exploration""; ""Nuclear Power""; ""Petroleum Exploration""; ""Industrial Process Control""; ""Power Electronics""; ""SURVEY II: APPLICATIONS BY THERMAL ENVIRONMENT""; ""SURVEY III: HIGH-TEMPERATURE ELECTORNIS APPLICATIONS BY COMPLEXITY""; ""SUMMARY""; ""2 State Of The Art Of Wide Bandgap Materials""; ""SILICON CARBIDE""; ""Materials Description And Properties""; ""Methods Of Fabrication""; ""Bulk Growth""; ""Background""; ""Current Status""; ""Epitaxial Growth""; ""Background""; ""CVD Of α-SiC Epitaxial Films""
- ""SiC Epitaxy In The c-Axis Direction""""SiC Epitaxy In The a-Axis Direction""; ""Hetero-Epitaxial Growth Of 3C-SiC Films""; ""Other Epitaxial Processes""; ""Summary""; ""NITRIDE MATERIALS""; ""Properties""; ""Crystal Growth""; ""DIAMOND""; ""Materials Description And Properties""; ""Methods Of Synthesis And Characterization""; ""Synthesis""; ""Characterization""; ""Diamond Processing""; ""3 Device Physics: Behavior at Elevated Temperatures""; ""HIGH-TEMPERATURE EFFECTS: FUNDAMENTAL, MATERIALS-RELATED PROPERTIES""; ""Carrier Mobilities""
- ""Intrinsic Carrier Concentrations: Dependence on Bandgap Energy and Temperature""""PREDICTING HIGH-TEMPERATURE-DEVICE PERFORMANCE: MATERIALS-RELATED FIGURES OF MERIT""; ""Device Physics At High Temperatures""; ""Junction Leakage: p-n Junctions And Diodes""; ""Schottky Leakage""; ""Threshold Voltage Shifts""; ""Choice Of High-Temperature-Device Technologies""; ""4 Generic Technical Issues Associated With Materials For High-Temperature Semiconductors""; ""ELECTRICAL CONTACTS""; ""Schottky Contacts To SiC""; ""Ohmic Contacts To SiC""; ""Ohmic Contacts To GaN""; ""DOPING AND IMPLANTATION""
- ""Doping Of SiC""""Doping Of GaN""; ""Doping Of AlN""; ""Doping Of Diamond""; ""GATE OXIDES AND INSULATORS""; ""Gate Oxides And Insulators For SiC""; ""Gate Oxides And Insulators For The Nitrides""; ""Gate Oxides And Insulators For Diamond""; ""ETCHING""; ""Etching Of SiC""; ""Etching Of The Nitrides: GaN And AlN""; ""Etching Of Diamond""; ""DEFECT ENGINEERING AND CONTROL""; ""YIELD""; ""DEVICE RELIABILITY""; ""5 High-Temperature Electronic Packaging""; ""CHIP PACKAGING""; ""SUBSTRATES""; ""THICK-FILM AND THIN-FILM METALLIZATION""; ""COMPONENT ATTACHMENT""; ""INTERCONNECTION""