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1965 transactions of the third International Vacuum Congress, 28 June-2 July 1965, Stuttgart, Germany. Volume 2, Part II, Sessions 5-8 /
1965 Transactions of the Third International Vacuum Congress, Volume 2 presents the methods for the epitaxial growth of silicon, which makes use of an ultra-thin layer of a silicon alloy on the substrate surface to develop epitaxial layers at temperature as low as 750�C. This book discuss...
| Clasificación: | Libro Electrónico |
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| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés Francés Alemán |
| Publicado: |
Oxford :
Pergamon Press,
1967.
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| Acceso en línea: | Texto completo |