C, H, N and O in Si and Characterization and Simulation of Materials and Processes : Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 /

Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial l...

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Détails bibliographiques
Cote:Libro Electrónico
Collectivités auteurs: Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors Strasbourg, France, Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes
Autres auteurs: Borghesi, A.
Format: Électronique Actes de congrès eBook
Langue:Inglés
Publié: Oxford : Elsevier Science, 1996.
Collection:European Materials Research Society symposia proceedings.
Sujets:
Semiconductors > Congresses.
Silicon > Congresses.
Semiconductors > Defects > Congresses.
Semi-conducteurs > Congr�es.
Silicium > Congr�es.
Semi-conducteurs > D�efauts > Congr�es.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Semiconductors
Semiconductors > Defects
Silicon
Congress
proceedings (reports)
Conference papers and proceedings
Conference papers and proceedings.
Actes de congr�es.
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