C, H, N and O in Si and Characterization and Simulation of Materials and Processes : Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 /

Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial l...

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Bibliographic Details
Call Number:Libro Electrónico
Corporate Authors: Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors Strasbourg, France, Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes
Other Authors: Borghesi, A.
Format: Electronic Conference Proceeding eBook
Language:Inglés
Published: Oxford : Elsevier Science, 1996.
Series:European Materials Research Society symposia proceedings.
Subjects:
Semiconductors > Congresses.
Silicon > Congresses.
Semiconductors > Defects > Congresses.
Semi-conducteurs > Congr�es.
Silicium > Congr�es.
Semi-conducteurs > D�efauts > Congr�es.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Semiconductors
Semiconductors > Defects
Silicon
Congress
proceedings (reports)
Conference papers and proceedings
Conference papers and proceedings.
Actes de congr�es.
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