Silicon molecular beam epitaxy : proceedings of the 3rd International Symposium on Silicon Molecular Beam Epitaxy, Symposium A of the 1989 E-MRS Conference, Strasbourg, France, 30 May-2 June 1989 /

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This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase e...

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Bibliographic Details
Call Number:Libro Electrónico
Corporate Authors: International Symposium on Silicon Molecular Beam Epitaxy Strasbourg, France, European Materials Research Society
Other Authors: Kasper, Erich, Parker, E. H. C.
Format: Electronic Conference Proceeding eBook
Language:Inglés
Published: Amsterdam ; New York : New York, NY, USA : North-Holland ; Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1989-<1990>
Series:European Materials Research Society symposia proceedings ; v. 10.
Subjects:
Molecular beam epitaxy > Congresses.
Silicon crystals > Congresses.
Crystal growth > Congresses.
Superlattices as materials > Congresses.
Microstructure > Congresses.
&#xFFFD;Epitaxie par jets mol&#xFFFD;eculaires > Congr&#xFFFD;es.
Silicium cristallis&#xFFFD;e > Congr&#xFFFD;es.
Cristaux > Croissance > Congr&#xFFFD;es.
Superr&#xFFFD;eseaux > Congr&#xFFFD;es.
Microstructure (Physique) > Congr&#xFFFD;es.
Crystal growth
Microstructure
Molecular beam epitaxy
Silicon crystals
Superlattices as materials
Congress
proceedings (reports)
Conference papers and proceedings
Conference papers and proceedings.
Actes de congr&#xFFFD;es.
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