The physics and modeling of MOSFETS : surface-potential model HiSIM /

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This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm M...

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Détails bibliographiques
Cote:Libro Electrónico
Auteurs principaux: Miura-Mattausch, Mitiko, 1949-, Mattausch, Hans Jürgen (Auteur), Ezaki, Tatsuya (Auteur)
Format: Électronique eBook
Langue:Inglés
Publié: Singapore ; Hackensack, N.J. : World Scientific Pub., ©2008.
Collection:International series on advances in solid state electronics and technology.
Sujets:
Metal oxide semiconductor field-effect transistors > Mathematical models.
Transistors MOSFET > Modèles mathématiques.
TECHNOLOGY & ENGINEERING.
Electrical.
TECHNOLOGY & ENGINEERING > Electronics > Transistors.
Metal oxide semiconductor field-effect transistors > Mathematical models
Electrical & Computer Engineering.
Engineering & Applied Sciences.
Electrical Engineering.
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