Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications /

Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. Th...

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Bibliographic Details
Call Number:Libro Electrónico
Main Author: Rein, Stefan (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:Inglés
Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2005.
Edition:1st ed. 2005.
Series:Springer Series in Materials Science, 85
Subjects:
Condensed matter.
Spectrum analysis.
Optical materials.
Condensed Matter Physics.
Spectroscopy.
Optical Materials.
Online Access:Texto Completo
Table of Contents:
  • Theory of carrier lifetime in silicon
  • Lifetime measurement techniques
  • Theory of lifetime spectroscopy
  • Defect characterization on intentionally metal-contaminated silicon samples
  • The metastable defect in boron-doped Czochralski silicon
  • Summary and further work
  • Zusammenfassung und Ausblick.

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