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GaP Heteroepitaxy on Si(100) Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients /
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial po...
| Call Number: | Libro Electrónico |
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| Main Author: | |
| Corporate Author: | |
| Format: | Electronic eBook |
| Language: | Inglés |
| Published: |
Cham :
Springer International Publishing : Imprint: Springer,
2013.
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| Edition: | 1st ed. 2013. |
| Series: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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| Subjects: | |
| Online Access: | Texto Completo |
Table of Contents:
- Introduction
- Experimental
- Si(100) surfaces in chemical vapor environments
- GaP(100) and InP(100) surfaces
- GaP growth on Si(100) and anti-phase disorder
- Conclusion.