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GaP Heteroepitaxy on Si(100) Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients /
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial po...
| Cote: | Libro Electrónico |
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| Format: | Électronique eBook |
| Langue: | Inglés |
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Cham :
Springer International Publishing : Imprint: Springer,
2013.
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| Édition: | 1st ed. 2013. |
| Collection: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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| Accès en ligne: | Texto Completo |