Advances in chemical mechanical planarization (CMP) /

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Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology has grown to encompass the removal and planar...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Babu, S. V. (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Duxford, United Kingsom : Woodhead Publishing, 2022.
Edición:Second edition.
Colección:Woodhead Publishing series in electronic and optical materials.
Temas:
Chemical mechanical planarization.
Semiconductors > Materials.
Planarisation chimicom�ecanique.
Semi-conducteurs > Mat�eriaux.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • <P><b>Part One
  • CMP of dielectric and metal films</b></p> <p>1. Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP)</p> <p>2. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond</p> <p>3. Electrochemical techniques and their applications for CMP of metal films</p> <p>4. Ultra-low-k materials and chemical mechanical planarization (CMP)</p> <p>5. CMP processing of high mobility channel materials
  • alternatives to Sis</p> <p>6. Multiscale modeling of chemical mechanical planarization (CMP)</p> <p>7. Polishing of SiC films</p> <p>8. Chemical and physical mechanisms of CMP of gallium nitride</p> <p>9. Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes</p> <p>10. Transient copper removal rate phenomena with implications for polishing mechanisms</p> <p>11. Environmental aspects of planarization processes </p><b> <p>Part Two
  • Consumables and process control for improved CMP</p></b> <p>12. Preparation and characterization of slurry for CMP</p> <p>13. Chemical metrology methods for CMP quality</p> <p>14. Diamond disc pad conditioning in chemical mechanical polishing</p> <p>15. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy</p> <p>16. Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters</p> <p>17. Approaches to defect characterization, mitigation and reduction</p> <p>18. Challenges and solutions for post-CMP cleaning at device and interconnect levels</p> <p>19. Applications of chemical mechanical planarization (CMP) to More than Moore devices</p> <p>20. CMP for phase change materials</p> <p>21. CMP pads and their performance</p> <p>22. Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning</p>

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