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Directed self-assembly of block copolymers for nano-manufacturing /
The directed self-assembly (DSA) method of patterning for microelectronics uses polymer phase-separation to generate features of less than 20nm, with the positions of self-assembling materials externally guided into the desired pattern. Directed self-assembly of Block Co-polymers for Nano-manufactur...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Cambridge :
Woodhead Publishing,
[2015]
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| Colección: | Woodhead Publishing series in electronic and optical materials ;
no. 83. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Directed Self-assembly of Block Copolymers for Nano-manufacturing; Copyright; Contents; List of contributors; Woodhead Publishing Series in Electronic and Optical Materials; Part One: Physics and chemistry of block copolymer (BCP) materials ; Chapter 1: Physics of block copolymers from bulk to thin films; 1.1 . Introduction; 1.2 . Order-disorder transition of block copolymers; 1.2.1 . Disordered state; 1.2.2 . Weak segregation limit in ordered state; 1.2.3 . Strong segregation limit in ordered state; 1.2.4 . Phase diagram obtained by using self-consistent field theory.
- 1.3 . Morphologies of diblock copolymer/homopolymer mixtures1.4 . Dynamics of phase transition in block copolymers; 1.5 . Structures of block copolymer in thin films; 1.5.1 . Free energy of block copolymer thin film; 1.5.2 . Effect of surface energy term; F surface ; 1.5.3 . Effect of bulk energy term F bulk ; 1.6 . Conclusion; References; Chapter 2: RAFT synthesis of block copolymers and their self-assembly properties; 2.1 . RAFT process description; 2.2 . Polymerization process details; 2.2.1 . In situ process analysis; 2.3 . RAFT end-group catalytic radical reduction.
- 2.4 . Block Copolymer In situ Topcoat Applications2.5 . DSA Applications; 2.6 . High chi block copolymers; 2.7 . Conclusions; Acknowledgments; References; Chapter 3: Thermal and solvent annealing of block copolymer films; 3.1 . Introduction; 3.2 . Thermal annealing of BCPs films; 3.2.1 . Fundamental consideration; 3.2.2 . Film thickness effect and temperature gradient; 3.2.3 . Crystallization behavior induced by thermal annealing; 3.3 . Solvent annealing of BCPs films; 3.3.1 . Fundamental consideration; 3.3.2 . Factors affecting the annealing process.
- 3.3.3 . Combination of solvent annealing and thermal annealing3.4 . Summary and outlook; References; Chapter 4: Field-theoretic simulations and self-consistent field theory for studying block copolymer directed self-assembly; 4.1 Introduction; 4.2 Overview of field-theory-based simulations of block copolymer DSA; 4.3 Chemoepitaxy modeling; 4.4 Graphoepitaxy modeling; 4.4.1 Cylinders in a rectangular trench; 4.4.2 Contact hole shrink; 4.5 Summary and outlook; References; Part Two: Templates and patterning for directed self-assembly.
- Chapter 5: Directed self-oriented self-assembly of block copolymers using topographical surfaces5.1 . Introduction; 5.2 . Control of interfacial interactions; 5.3 . Graphoepitaxy; 5.3.1 . Fabrication of topographical surfaces; 5.3.2 . Geometry with deep patterning; 5.3.2.1 . Deep trench surfaces; 5.3.2.2 . Post surfaces; 5.3.2.3 . Other surfaces; 5.3.3 . Geometry with minimal patterning; 5.3.3.1 . Faceted surfaces; 5.3.3.2 . Shallow trench surfaces; 5.4 . Application of BCPs guided by topographical surfaces; 5.5 . Summary and outlook; References.