Applied solid state science. advances in materials and device research / Supplement 2, Silicon integrated circuits. Part C :

Silicon Integrated Circuits, Part 2 covers some of the most promising approaches along with the new understanding of processing-related areas of physics and chemistry. The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid iso...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Wolfe, Raymond (Editor ), Kahng, Dawon (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Orlando ; London : Academic, 1985.
Colección:Applied solid state science. Supplement ; 2.
Temas:
Integrated circuits > Materials.
Solid state physics.
Circuits int�egr�es > Mat�eriaux.
Physique de l'�etat solide.
TECHNOLOGY & ENGINEERING > Mechanical.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Silicon Integrated Circuits; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. Transient Thermal Processing of Silicon; I. Introduction; II. Adiabatic Annealing; III. Thermal Flux Annealing; IV. Isothermal Rapid Annealing; V. Related Rapid Thermal Processes; VI. Summary; References; Chapter 2. Reactive Ion-Beam Etching and Plasma Deposition Techniques Using Electron Cyclotron Resonance Plasmas; I. Introduction; II. Reactive Ion-Beam Etching; III. Plasma Deposition; References; Chapter 3. Physics of VLSI Processing and Process Simulation; I. Introduction.
  • II. Physics of Processing and Process SimulationIII. Conclusions and the Future; References; Author Index; Subject Index.

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