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SCIDIR_ocn892489120 |
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OCoLC |
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20231120111806.0 |
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m o d |
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cr cnu---unuuu |
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141007s1985 flua o 001 0 eng d |
040 |
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|a OPELS
|b eng
|e rda
|e pn
|c OPELS
|d E7B
|d OCLCF
|d EBLCP
|d N$T
|d DEBSZ
|d YDXCP
|d IDB
|d MERUC
|d OCLCQ
|d VLY
|d OCLCO
|d OCLCQ
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019 |
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|a 895430765
|a 948574878
|a 1162249479
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|a 9781483214788
|q (electronic bk.)
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020 |
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|a 1483214788
|q (electronic bk.)
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020 |
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|z 9780120029600
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035 |
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|a (OCoLC)892489120
|z (OCoLC)895430765
|z (OCoLC)948574878
|z (OCoLC)1162249479
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050 |
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4 |
|a QC176
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072 |
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|a TEC
|x 009070
|2 bisacsh
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082 |
0 |
4 |
|a 621.3815/2
|2 22
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245 |
0 |
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|a Applied solid state science.
|n Supplement 2,
|p Silicon integrated circuits.
|n Part C :
|b advances in materials and device research /
|c edited by Dawon Kahng.
|
246 |
3 |
0 |
|a Silicon integrated circuits.
|n Part C
|
264 |
|
1 |
|a Orlando ;
|a London :
|b Academic,
|c 1985.
|
300 |
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|a 1 online resource (x, 359 pages) :
|b illustrations
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336 |
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|a text
|b txt
|2 rdacontent
|
337 |
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|a computer
|b c
|2 rdamedia
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338 |
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|a online resource
|b cr
|2 rdacarrier
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490 |
1 |
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|a Applied Solid State Science. Supplement,
|x 0194-2891 ;
|v 2
|
500 |
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|a Includes index.
|
588 |
0 |
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|a Print version record.
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505 |
0 |
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|a Front Cover; Silicon Integrated Circuits; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. Transient Thermal Processing of Silicon; I. Introduction; II. Adiabatic Annealing; III. Thermal Flux Annealing; IV. Isothermal Rapid Annealing; V. Related Rapid Thermal Processes; VI. Summary; References; Chapter 2. Reactive Ion-Beam Etching and Plasma Deposition Techniques Using Electron Cyclotron Resonance Plasmas; I. Introduction; II. Reactive Ion-Beam Etching; III. Plasma Deposition; References; Chapter 3. Physics of VLSI Processing and Process Simulation; I. Introduction.
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505 |
8 |
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|a II. Physics of Processing and Process SimulationIII. Conclusions and the Future; References; Author Index; Subject Index.
|
520 |
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|a Silicon Integrated Circuits, Part 2 covers some of the most promising approaches along with the new understanding of processing-related areas of physics and chemistry. The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid isothermal annealing; adiabatic annealing with laser and electron beams; pulsed melting; thermal flux annealing; rapid isothermal annealing; and several applications stemming from rapid annealing and semiconductor processing with directed-energy beams. The second chapter is concerned with the use of el.
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504 |
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|a Includes bibliographical references at the end of each chapters and indexes.
|
546 |
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|a English.
|
650 |
|
0 |
|a Integrated circuits
|x Materials.
|
650 |
|
0 |
|a Solid state physics.
|
650 |
|
6 |
|a Circuits int�egr�es
|0 (CaQQLa)201-0032322
|x Mat�eriaux.
|0 (CaQQLa)201-0379329
|
650 |
|
6 |
|a Physique de l'�etat solide.
|0 (CaQQLa)201-0015752
|
650 |
|
7 |
|a TECHNOLOGY & ENGINEERING
|x Mechanical.
|2 bisacsh
|
650 |
|
7 |
|a Integrated circuits
|x Materials.
|2 fast
|0 (OCoLC)fst00975579
|
650 |
|
7 |
|a Solid state physics.
|2 fast
|0 (OCoLC)fst01125456
|
700 |
1 |
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|a Wolfe, Raymond,
|e editor.
|
700 |
1 |
|
|a Kahng, Dawon,
|e editor.
|
776 |
0 |
8 |
|i Print version:
|t Applied solid state science. Supplement 2, Silicon integrated circuits
|z 9780120029600
|w (OCoLC)502314864
|
830 |
|
0 |
|a Applied solid state science.
|p Supplement ;
|v 2.
|
856 |
4 |
0 |
|u https://sciencedirect.uam.elogim.com/science/book/9780120029600
|z Texto completo
|