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Applied solid state science. advances in materials and device research / Supplement 2, Silicon integrated circuits. Part C :

Silicon Integrated Circuits, Part 2 covers some of the most promising approaches along with the new understanding of processing-related areas of physics and chemistry. The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid iso...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Wolfe, Raymond (Editor ), Kahng, Dawon (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Orlando ; London : Academic, 1985.
Colección:Applied solid state science. Supplement ; 2.
Temas:
Acceso en línea:Texto completo

MARC

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245 0 0 |a Applied solid state science.  |n Supplement 2,  |p Silicon integrated circuits.  |n Part C :  |b advances in materials and device research /  |c edited by Dawon Kahng. 
246 3 0 |a Silicon integrated circuits.  |n Part C 
264 1 |a Orlando ;  |a London :  |b Academic,  |c 1985. 
300 |a 1 online resource (x, 359 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Applied Solid State Science. Supplement,  |x 0194-2891 ;  |v 2 
500 |a Includes index. 
588 0 |a Print version record. 
505 0 |a Front Cover; Silicon Integrated Circuits; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. Transient Thermal Processing of Silicon; I. Introduction; II. Adiabatic Annealing; III. Thermal Flux Annealing; IV. Isothermal Rapid Annealing; V. Related Rapid Thermal Processes; VI. Summary; References; Chapter 2. Reactive Ion-Beam Etching and Plasma Deposition Techniques Using Electron Cyclotron Resonance Plasmas; I. Introduction; II. Reactive Ion-Beam Etching; III. Plasma Deposition; References; Chapter 3. Physics of VLSI Processing and Process Simulation; I. Introduction. 
505 8 |a II. Physics of Processing and Process SimulationIII. Conclusions and the Future; References; Author Index; Subject Index. 
520 |a Silicon Integrated Circuits, Part 2 covers some of the most promising approaches along with the new understanding of processing-related areas of physics and chemistry. The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid isothermal annealing; adiabatic annealing with laser and electron beams; pulsed melting; thermal flux annealing; rapid isothermal annealing; and several applications stemming from rapid annealing and semiconductor processing with directed-energy beams. The second chapter is concerned with the use of el. 
504 |a Includes bibliographical references at the end of each chapters and indexes. 
546 |a English. 
650 0 |a Integrated circuits  |x Materials. 
650 0 |a Solid state physics. 
650 6 |a Circuits int�egr�es  |0 (CaQQLa)201-0032322  |x Mat�eriaux.  |0 (CaQQLa)201-0379329 
650 6 |a Physique de l'�etat solide.  |0 (CaQQLa)201-0015752 
650 7 |a TECHNOLOGY & ENGINEERING  |x Mechanical.  |2 bisacsh 
650 7 |a Integrated circuits  |x Materials.  |2 fast  |0 (OCoLC)fst00975579 
650 7 |a Solid state physics.  |2 fast  |0 (OCoLC)fst01125456 
700 1 |a Wolfe, Raymond,  |e editor. 
700 1 |a Kahng, Dawon,  |e editor. 
776 0 8 |i Print version:  |t Applied solid state science. Supplement 2, Silicon integrated circuits  |z 9780120029600  |w (OCoLC)502314864 
830 0 |a Applied solid state science.  |p Supplement ;  |v 2. 
856 4 0 |u https://sciencedirect.uam.elogim.com/science/book/9780120029600  |z Texto completo