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Organometallic vapor phase epitaxy : theory and practice /
Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1989.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 001 | SCIDIR_ocn838125855 | ||
| 003 | OCoLC | ||
| 005 | 20231117044848.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 130411s1989 maua ob 001 0 eng d | ||
| 040 | |a OPELS |b eng |e pn |c OPELS |d IDEBK |d E7B |d OCLCF |d UIU |d OCLCQ |d LEAUB |d OCLCO |d OCLCQ |d S2H |d OCLCO |d COM |d OCLCO |d OCL |d OCLCQ |d OCLCO | ||
| 020 | |z 0126738408 | ||
| 020 | |z 9780126738407 | ||
| 035 | |a (OCoLC)838125855 | ||
| 050 | 4 | |a QC611.8.C64 |b S77 1989eb | |
| 082 | 0 | 4 | |a 537.6/22 |2 22 |
| 100 | 1 | |a Stringfellow, G. B. |q (Gerald B.), |d 1942- | |
| 245 | 1 | 0 | |a Organometallic vapor phase epitaxy : |b theory and practice / |c Gerald B. Stringfellow. |
| 260 | |a Boston : |b Academic Press, |c �1989. | ||
| 300 | |a 1 online resource (xviii, 398 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 520 | |a Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport. | ||
| 588 | 0 | |a Print version record. | |
| 650 | 0 | |a Compound semiconductors. | |
| 650 | 0 | |a Metal organic chemical vapor deposition. | |
| 650 | 0 | |a Epitaxy. | |
| 650 | 6 | |a �Epitaxie. |0 (CaQQLa)201-0077948 | |
| 650 | 6 | |a Compos�es semi-conducteurs. |0 (CaQQLa)201-0286429 | |
| 650 | 6 | |a D�ep�ot en phase vapeur par organom�etalliques. |0 (CaQQLa)201-0347324 | |
| 650 | 7 | |a Epitaxy |2 fast |0 (OCoLC)fst00914372 | |
| 650 | 7 | |a Compound semiconductors |2 fast |0 (OCoLC)fst00871813 | |
| 650 | 7 | |a Metal organic chemical vapor deposition |2 fast |0 (OCoLC)fst01017612 | |
| 650 | 7 | |a Metallorganische Verbindungen |2 gnd |0 (DE-588)4038906-6 | |
| 650 | 7 | |a Gasphasenepitaxie |2 gnd |0 (DE-588)4156040-1 | |
| 776 | 0 | 8 | |i Print version: |a Stringfellow, G.B. (Gerald B.), 1942- |t Organometallic vapor phase epitaxy. |d Boston : Academic Press, �1989 |z 0126738408 |w (DLC) 89000351 |w (OCoLC)19321827 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780126738407 |z Texto completo |