Ion implantation technology-92 : proceedings of the Ninth International Conference on Ion Implantation Technology, Gainesvile, FL, USA, September 20-24, 1992 /

Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wi...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Conference on Ion Implantation Technology Gainesville, Fla.
Otros Autores: Downey, D. F.
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Amsterdam ; New York : North-Holland, 1993.
Temas:
Semiconductors > Congresses.
Ion implantation > Congresses.
Semiconductor doping > Congresses.
Semi-conducteurs > Congr�es.
Ions > Implantation > Congr�es.
Semi-conducteurs > Dopage > Congr�es.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Ion implantation
Semiconductor doping
Semiconductors
Congress
proceedings (reports)
Conference papers and proceedings
Conference papers and proceedings.
Actes de congr�es.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Ion Implantation Technology
  • 92; Copyright Page; Editorial; Committees, sponsors and exhibitors; Session Chairmen; Table of Contents; PART I; Section I: Overviews; Chapter 1. Ion implantation in future MOS technology; 1. Introduction; 2. Trends in the MOS transistor structure; 3. Additional observations; 4. Conclusions; Acknowledgements; References; Chapter 2. Damage analysis and engineering for ion implantation in ULSI process; 1. Introduction; 2. Damage formation analysis by simulation; 3. Damage analysis techniques; 4. Damage analysis and defect engineering in ULSI process
  • 5. SummaryAcknowledgements; References; Section II: New implanter systems; Chapter 3. High-voltage implantation facility at GM Research; 1. Introduction; 2. Plasma source; 3. Main plasma chamber; 4. High-voltage modulator system; 5. Experimental effort; References; Chapter 4. Performance characteristics of the Genus Inc. 1510 high energy ion implantation system; 1. Introduction; 2. System overview and performance; 3. Conclusion; Acknowledgements; References; Chapter 5.A 2 MV heavy ion Van de Graaff implanter for research and development; 1. Introduction; 2. Technical features
  • 3. Measured performance4. Applications; 5. Conclusions; Acknowledgements; References; Section III: New subsystems and components; Chapter 6. Metal-sheet-beam formation using an impregnated electrode-type liquid-metal ion source with a linear array of emission points; 1. Introduction; 2. Measurement system of beam profiles; 3. Beam profiles of the extracted ion beams; 4. Design of the lens system; 5. Beam profiles of the converged ion beams; 6. Conclusion; References; Section IV: Materials science; Chapter 7. SIMOX material manufacturability; 1. Introduction; 2. Material specifications: status
  • 2. Experimental3. Results and discussion; 4. Conclusions; Acknowledgements; References; Chapter 11. Defect formation in high dose oxygen implanted silicon; 1. Introduction; 2. Experimental procedures; 3. Results and discussion; 4. Summary and conclusions; Acknowledgements; References; Chapter 12. Iron gettering and doping in silicon due to MeV carbon implantation; 1. Introduction; 2. Experimental; 3. Results and discussion; 4. Conclusions; Acknowledgement; References; Chapter 13. B diffusion in Si predamaged with Si+ or Ge+ and preannealed at 200-1000�C; 1. Introduction; 2. Experiments

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