Cargando…

Oxygen in silicon /

This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions,...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Shimura, Fumio
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Boston : Academic Press, Inc., �1994.
Colección:Semiconductors and semimetals ; v. 42.
Temas:
Acceso en línea:Texto completo
Texto completo
Descripción
Sumario:This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Key Features* Comprehensive study of the behavior of oxygen in silicon* Discusses silicon crystals f.
Descripción Física:1 online resource (xvi, 679 pages) : illustrations
Bibliografía:Includes bibliographical references and index.
ISBN:9780080864396
0080864392
1281514233
9781281514233