Strain-engineered MOSFETs /

"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced d...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Maiti, C. K.
Otros Autores: Maiti, T. K.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Boca Raton, FL : CRC Press, ©2013.
Temas:
Metal oxide semiconductor field-effect transistors > Reliability.
Integrated circuits > Fault tolerance.
Strains and stresses.
Transistors MOSFET > Fiabilité.
Circuits intégrés > Tolérance aux fautes.
Contraintes (Mécanique)
strain.
stress.
Integrated circuits > Fault tolerance
Strains and stresses
Acceso en línea:Texto completo (Requiere registro previo con correo institucional)
Tabla de Contenidos:
  • 1. Introduction
  • 2. Substrate-induced strain engineering in CMOS technology
  • 3. Process-induced stress engineering in CMOS technology
  • 4. Electronic properties of strain-engineered semiconductors
  • 5. Strain-engineered MOSFETs
  • 6. Noise in strain-engineered devices / C. Mukherjee
  • 7. Technology CAD of strain-engineered MOSFETs
  • 8. Reliability and degradation of strain-engineered MOSFETs
  • 9. Process compact modelling of strain-engineered MOSFETs
  • 10. Process-aware design of strain-engineered MOSFETs
  • 11. Conclusions.

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