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Strain-engineered MOSFETs /
"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced d...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boca Raton, FL :
CRC Press,
©2013.
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| Temas: | |
| Acceso en línea: | Texto completo (Requiere registro previo con correo institucional) |
MARC
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| 008 | 131105s2013 flua ob 000 0 eng d | ||
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| 037 | |a CL0500000329 |b Safari Books Online | ||
| 050 | 4 | |a TK7871.99.M44 |b M248 2012 | |
| 082 | 0 | 4 | |a 621.3815284 |b M232 |
| 049 | |a UAMI | ||
| 100 | 1 | |a Maiti, C. K. | |
| 245 | 1 | 0 | |a Strain-engineered MOSFETs / |c C.K. Maiti, T.K. Maiti. |
| 246 | 3 | |a Strain-engineered metal-oxide-semiconductor field-effect transistors | |
| 260 | |a Boca Raton, FL : |b CRC Press, |c ©2013. | ||
| 300 | |a 1 online resource (xix, 288 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a data file | ||
| 588 | 0 | |a Print version record. | |
| 504 | |a Includes bibliographical references. | ||
| 505 | 0 | |a 1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions. | |
| 520 | |a "This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"-- |c Provided by publisher | ||
| 590 | |a O'Reilly |b O'Reilly Online Learning: Academic/Public Library Edition | ||
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors |x Reliability. | |
| 650 | 0 | |a Integrated circuits |x Fault tolerance. | |
| 650 | 0 | |a Strains and stresses. | |
| 650 | 6 | |a Transistors MOSFET |x Fiabilité. | |
| 650 | 6 | |a Circuits intégrés |x Tolérance aux fautes. | |
| 650 | 6 | |a Contraintes (Mécanique) | |
| 650 | 7 | |a strain. |2 aat | |
| 650 | 7 | |a stress. |2 aat | |
| 650 | 7 | |a Integrated circuits |x Fault tolerance |2 fast | |
| 650 | 7 | |a Strains and stresses |2 fast | |
| 700 | 1 | |a Maiti, T. K. | |
| 776 | 0 | 8 | |i Print version: |a Maiti, C.K. |t Strain-engineered MOSFETs. |d Boca Raton : Taylor & Francis, ©2013 |z 9781466500556 |w (DLC) 2012031209 |w (OCoLC)809563361 |
| 856 | 4 | 0 | |u https://learning.oreilly.com/library/view/~/9781466503472/?ar |z Texto completo (Requiere registro previo con correo institucional) |
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| 938 | |a Taylor & Francis |b TAFR |n CRC0KE15968PDF | ||
| 938 | |a YBP Library Services |b YANK |n 9727330 | ||
| 994 | |a 92 |b IZTAP | ||