Strain-engineered MOSFETs /

"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced d...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Maiti, C. K.
Otros Autores: Maiti, T. K.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Boca Raton, FL : CRC Press, ©2013.
Temas:
Metal oxide semiconductor field-effect transistors > Reliability.
Integrated circuits > Fault tolerance.
Strains and stresses.
Transistors MOSFET > Fiabilité.
Circuits intégrés > Tolérance aux fautes.
Contraintes (Mécanique)
strain.
stress.
Integrated circuits > Fault tolerance
Strains and stresses
Acceso en línea:Texto completo (Requiere registro previo con correo institucional)
Descripción
Sumario:"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"--
Descripción Física:1 online resource (xix, 288 pages) : illustrations
Bibliografía:Includes bibliographical references.
ISBN:1466500557
9781466500556
9781466503472
1466503475
1138075604
9781138075603

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