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Through-Silicon Vias for 3D Integration /

This professional book focuses on the latest cost- and space-saving methods of 3D integrated circuits-essential for the development of low-cost, high-performance electronic and optoelectronic products.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Lau, John H. (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York, N.Y. : McGraw-Hill Education, [2013]
Edición:First edition.
Colección:McGraw-Hill's AccessEngineering.
Temas:
Acceso en línea:Texto completo
Tabla de Contenidos:
  • A. About the Author
  • B. Foreword
  • C. Preface
  • D. Acknowledgments
  • 1. Nanotechnology and 3D Integration for the Semiconductor Industry
  • Introduction
  • Nanotechnology
  • Three-Dimensional Integration
  • Challenges and Outlook of 3D Si Integration
  • Potential Applications and Challenges of 3D IC Integration
  • Recent Advances of 2.5D IC Integration (Interposers)
  • New Trends in TSV Passive Interposers for 3D IC Integration
  • Embedded 3D IC Integration
  • Summary and Recommendations
  • TSV Patents
  • References
  • General Readings
  • 2. Through-Silicon Via Technology
  • Introduction
  • Who Invented TSV and When
  • High-Volume Products with TSV Technology
  • Via Forming
  • Dielectric Isolation Layer (Oxide Liner) Deposition
  • Barrier (Adhesion) Layer and Seed (Metal) Layer Deposition
  • TSV Filling by Cu Plating
  • Chemical-Mechanical Polishing of Cu Plating Residues
  • TSV Cu Reveal
  • FEOL and BEOL
  • TSV Processes
  • References
  • 3. Through-Silicon Vias: Mechanical, Thermal, and Electrical Behaviors
  • Introduction
  • Mechanical Behavior of TSVs in System-in-Package
  • Mechanical Behavior of TSVs in Memory-Chip Stacking
  • Thermal Behaviors of TSVs
  • Electrical Modeling of TSVs
  • Electrical Test of Blind TSVs
  • References
  • 4. Thin-Wafer Strength Measurement
  • Introduction
  • Piezoresistive Stress Sensors for Thin-Wafer Strength Measurement
  • Effects of Wafer Back-Grinding on the Mechanical Behavior of Cu?Low-k Chips
  • References
  • 5. Thin-Wafer Handling
  • Introduction
  • Wafer Thinning and Thin-Wafer Handling
  • Adhesive Is the Key
  • Thin-Wafer Handling Issues and Potential Solutions
  • Effect of Dicing Tape on Thin-Wafer Handling of Wafers with Cu/Au Pads
  • Effect of Dicing Tape on Thin-Wafer Handling of Wafers with Cu-Ni-Au UBMs
  • Effect of Dicing Tape on Thin-Wafer Handling of Interposer with RDLs and Ordinary Solder Bumps
  • Materials and Equipments for Thin-Wafer Handling
  • Adhesive and Process Guidelines for Thin-Wafer Handling
  • Summary and Recommendations
  • 3M Wafer Support System
  • EVG's Temporary Bonding and Debonding System
  • Thin-Wafer Handling with Carrierless Technology
  • References
  • 6. Microbumping, Assembly, and Reliability
  • Introduction
  • Problem Definition
  • Electroplating Method for Wafer Bumping of Ordinary Solder Bumps
  • Assembly of 3D IC Integration SiPs
  • Electroplating Method for Wafer Bumping of Solder Microbumps
  • Can We Apply the Same Parameters of the Electroplating Method for Ordinary Solder Bumps to Microbumps?
  • Summary and Recommendations
  • Lead-Free Fine-Pitch Solder Microbumping
  • Lead-Free Fine-Pitch C2C Solder Microbump Assembly
  • Wafer Bumping of Lead-Free Ultrafine-Pitch Solder Microbumps
  • Conclusions and Recommendations
  • References
  • 7. Microbump Electromigration
  • Introduction
  • Solder Microjoints with Larger Solder Volumes and Pitch
  • Solder Microjoints with Smaller Volumes and Pitches
  • References
  • 8. Transient Liquid-Phase Bonding: Chip-to-Chip, Chip-to-Wafer, and Wafer-to-Wafer
  • Introduction
  • How Does Low-Temperature Bonding with Solder Work?
  • Low-Temperature C2C [(SiO2/Si3N4/Ti/Cu) to (SiO2/Si3N4/Ti/Cu/In/Sn/Au)] Bonding
  • Low-Temperature C2C [(SiO2/Ti/Cu/Au/Sn/In/ Sn/Au) to (SiO2/Ti/Cu/Sn/In/Sn/Au)] Bonding.
  • Low-Temperature C2W [(SiO2/Ti/Au/Sn/In/Au) to (SiO2/Ti/Au)] Bonding
  • Low-Temperature W2W [TiCuTiAu to TiCuTiAuSnInSnInAu] Bonding
  • References
  • 9. Thermal Management of Three-Dimensional Integrated Circuit Integration
  • Introduction
  • Effects of TSV Interposer on Thermal Performance of 3D Integration SiPs
  • Thermal Performance of 3D Memory-Chip Stacking
  • Effect of Thickness of the TSV Chip on Its Hot-Spot Temperature
  • Summary and Recommendations
  • Thermal Management System with TSVs and Microchannels for 3D Integration SiPs
  • References
  • 10. Three-Dimensional Integrated Circuit Packaging
  • Introduction
  • Cost: TSV Technology versus Wire-Bonding Technology
  • Wire Bonding of Stack Dies on Cu?Low-k Chips
  • Bare Chip-to-Chip and Face-to-Face Interconnects
  • Low-Cost, High-Performance, and High-Density SiPs with Face-to-Face Interconnects
  • Fan-Out-Embedded WLP-to-Chip (Face-to-Face) Interconnects
  • A Note on Wire-Bonding Reliability
  • References
  • 11. Future Trends of 3D Integration
  • Introduction
  • The Trend of 3D Si Integration
  • The Trend of 3D IC Integration
  • References.