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Through-Silicon Vias for 3D Integration /
This professional book focuses on the latest cost- and space-saving methods of 3D integrated circuits-essential for the development of low-cost, high-performance electronic and optoelectronic products.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York, N.Y. :
McGraw-Hill Education,
[2013]
|
| Edición: | First edition. |
| Colección: | McGraw-Hill's AccessEngineering.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 010 | |z 2015510566 | ||
| 020 | |a 9780071785143 (print-ISBN) | ||
| 020 | |a 0071785140 (print-ISBN) | ||
| 035 | |a (OCoLC)931505425 | ||
| 040 | |a IN-ChSCO |b eng |e rda | ||
| 041 | 0 | |a eng | |
| 050 | 4 | |a TK7874.893 | |
| 082 | 0 | 4 | |a 621.3815 |2 23 |
| 100 | 1 | |a Lau, John H., |e author. | |
| 245 | 1 | 0 | |a Through-Silicon Vias for 3D Integration / |c John H. Lau. |
| 250 | |a First edition. | ||
| 264 | 1 | |a New York, N.Y. : |b McGraw-Hill Education, |c [2013] | |
| 264 | 4 | |c ?2013 | |
| 300 | |a 1 online resource (xxiv, 487 pages) : |b illustrations. | ||
| 336 | |a text |2 rdacontent | ||
| 337 | |a computer |2 rdamedia | ||
| 338 | |a online resource |2 rdacarrier | ||
| 490 | 1 | |a McGraw-Hill's AccessEngineering | |
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a A. About the Author -- B. Foreword -- C. Preface -- D. Acknowledgments -- 1. Nanotechnology and 3D Integration for the Semiconductor Industry -- Introduction -- Nanotechnology -- Three-Dimensional Integration -- Challenges and Outlook of 3D Si Integration -- Potential Applications and Challenges of 3D IC Integration -- Recent Advances of 2.5D IC Integration (Interposers) -- New Trends in TSV Passive Interposers for 3D IC Integration -- Embedded 3D IC Integration -- Summary and Recommendations -- TSV Patents -- References -- General Readings -- 2. Through-Silicon Via Technology -- Introduction -- Who Invented TSV and When -- High-Volume Products with TSV Technology -- Via Forming -- Dielectric Isolation Layer (Oxide Liner) Deposition -- Barrier (Adhesion) Layer and Seed (Metal) Layer Deposition -- TSV Filling by Cu Plating -- Chemical-Mechanical Polishing of Cu Plating Residues -- TSV Cu Reveal -- FEOL and BEOL -- TSV Processes -- References -- 3. Through-Silicon Vias: Mechanical, Thermal, and Electrical Behaviors -- Introduction -- Mechanical Behavior of TSVs in System-in-Package -- Mechanical Behavior of TSVs in Memory-Chip Stacking -- Thermal Behaviors of TSVs -- Electrical Modeling of TSVs -- Electrical Test of Blind TSVs -- References -- 4. Thin-Wafer Strength Measurement -- Introduction -- Piezoresistive Stress Sensors for Thin-Wafer Strength Measurement -- Effects of Wafer Back-Grinding on the Mechanical Behavior of Cu?Low-k Chips -- References -- 5. Thin-Wafer Handling -- Introduction -- Wafer Thinning and Thin-Wafer Handling -- Adhesive Is the Key -- Thin-Wafer Handling Issues and Potential Solutions -- Effect of Dicing Tape on Thin-Wafer Handling of Wafers with Cu/Au Pads -- Effect of Dicing Tape on Thin-Wafer Handling of Wafers with Cu-Ni-Au UBMs -- Effect of Dicing Tape on Thin-Wafer Handling of Interposer with RDLs and Ordinary Solder Bumps -- Materials and Equipments for Thin-Wafer Handling -- Adhesive and Process Guidelines for Thin-Wafer Handling -- Summary and Recommendations -- 3M Wafer Support System -- EVG's Temporary Bonding and Debonding System -- Thin-Wafer Handling with Carrierless Technology -- References -- 6. Microbumping, Assembly, and Reliability -- Introduction -- Problem Definition -- Electroplating Method for Wafer Bumping of Ordinary Solder Bumps -- Assembly of 3D IC Integration SiPs -- Electroplating Method for Wafer Bumping of Solder Microbumps -- Can We Apply the Same Parameters of the Electroplating Method for Ordinary Solder Bumps to Microbumps? -- Summary and Recommendations -- Lead-Free Fine-Pitch Solder Microbumping -- Lead-Free Fine-Pitch C2C Solder Microbump Assembly -- Wafer Bumping of Lead-Free Ultrafine-Pitch Solder Microbumps -- Conclusions and Recommendations -- References -- 7. Microbump Electromigration -- Introduction -- Solder Microjoints with Larger Solder Volumes and Pitch -- Solder Microjoints with Smaller Volumes and Pitches -- References -- 8. Transient Liquid-Phase Bonding: Chip-to-Chip, Chip-to-Wafer, and Wafer-to-Wafer -- Introduction -- How Does Low-Temperature Bonding with Solder Work? -- Low-Temperature C2C [(SiO2/Si3N4/Ti/Cu) to (SiO2/Si3N4/Ti/Cu/In/Sn/Au)] Bonding -- Low-Temperature C2C [(SiO2/Ti/Cu/Au/Sn/In/ Sn/Au) to (SiO2/Ti/Cu/Sn/In/Sn/Au)] Bonding. | |
| 505 | 0 | |a Low-Temperature C2W [(SiO2/Ti/Au/Sn/In/Au) to (SiO2/Ti/Au)] Bonding -- Low-Temperature W2W [TiCuTiAu to TiCuTiAuSnInSnInAu] Bonding -- References -- 9. Thermal Management of Three-Dimensional Integrated Circuit Integration -- Introduction -- Effects of TSV Interposer on Thermal Performance of 3D Integration SiPs -- Thermal Performance of 3D Memory-Chip Stacking -- Effect of Thickness of the TSV Chip on Its Hot-Spot Temperature -- Summary and Recommendations -- Thermal Management System with TSVs and Microchannels for 3D Integration SiPs -- References -- 10. Three-Dimensional Integrated Circuit Packaging -- Introduction -- Cost: TSV Technology versus Wire-Bonding Technology -- Wire Bonding of Stack Dies on Cu?Low-k Chips -- Bare Chip-to-Chip and Face-to-Face Interconnects -- Low-Cost, High-Performance, and High-Density SiPs with Face-to-Face Interconnects -- Fan-Out-Embedded WLP-to-Chip (Face-to-Face) Interconnects -- A Note on Wire-Bonding Reliability -- References -- 11. Future Trends of 3D Integration -- Introduction -- The Trend of 3D Si Integration -- The Trend of 3D IC Integration -- References. | |
| 520 | 3 | |a This professional book focuses on the latest cost- and space-saving methods of 3D integrated circuits-essential for the development of low-cost, high-performance electronic and optoelectronic products. | |
| 530 | |a Also available in print edition. | ||
| 533 | |a Electronic reproduction. |b New York, N.Y. : |c McGraw Hill, |d 2013. |n Mode of access: World Wide Web. |n System requirements: Web browser. |n Access may be restricted to users at subscribing institutions. | ||
| 538 | |a Mode of access: Internet via World Wide Web. | ||
| 546 | |a In English. | ||
| 588 | |a Description based on cover image and table of contents, viewed on November 23, 2015. | ||
| 650 | 0 | |a Three-dimensional integrated circuits. | |
| 655 | 0 | |a Electronic books. | |
| 776 | 0 | |i Print version: |t Through-Silicon Vias for 3D Integration. |b First edition. |d New York, N.Y. : McGraw-Hill Education, 2013 |w (OCoLC)748333223 | |
| 830 | 0 | |a McGraw-Hill's AccessEngineering. | |
| 856 | 4 | 0 | |u https://accessengineeringlibrary.uam.elogim.com/content/book/9780071785143 |z Texto completo |