Advances in CMP/polishing technologies for the manufacture of electronic devices /

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CMP and polishing are the most precise processes used to finish the surfaces of mechanical and electronic or semiconductor components. --P. 4 of cover.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Doi, Toshiro K., 1947-, Marinescu, Ioan D., Kurokawa, Syuhei
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Oxford : Elsevier, 2012.
Edición:1st ed.
Temas:
Grinding and polishing.
TECHNOLOGY & ENGINEERING > Technical & Manufacturing Industries & Trades.
Acceso en línea:Texto completo

MARC

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245 0 0 |a Advances in CMP/polishing technologies for the manufacture of electronic devices /  |c edited by Toshiro Doi, Ioan D. Marinescu, Syuhei Kurokawa. 
250 |a 1st ed. 
260 |a Oxford :  |b Elsevier,  |c 2012. 
300 |a 1 online resource (xii, 317 pages) :  |b illustrations, color portraits 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record. 
520 3 |a CMP and polishing are the most precise processes used to finish the surfaces of mechanical and electronic or semiconductor components. --P. 4 of cover. 
505 0 |a Front Cover; CMP/Polishing Technologies for the Manufacture of Electronic Devices; Copyright Page; Contents; Contributors; Preface; About the Authors; 1. Introduction; References; 2. Details of the Fabrication Process for Devices with a Silicon Crystal Substrate; 2.1 History of Semiconductor Devices and their Types; 2.2 Semiconductor Device Process Technology and current Situation; 2.2.1 Element Isolation Structure; 2.2.2 Multilayer Interconnections; References; 3. The Current Situation in Ultra-Precision Technology -- Silicon Single Crystals as an Example 
505 8 |a 3.1 Production of Single Crystal Silicon3.2 Slicing: Pre- and Post-Process; 3.2.1 Slicing; 3.2.1.1 Introduction; 3.2.1.2 Abrasive Wire; Loose-Abrasive Wire; Comparison Between Wire Saw and ID Saw; Fundamentals of Free Abrasive Machining; Fixed-Abrasive Wire; Saw Damage on the Surface of Silicon Wafer; 3.2.1.3 Electrical Discharge Machining (EDM); 3.2.1.4 Wire Electrolytic-Spark Hybrid Machining; 3.2.2 Beveling; 3.3 Lapping of Silicon; 3.3.1 Introduction; 3.3.1.1 Brief History; 3.3.2 Lapping Mechanism; 3.3.3 Mathematical Model; 3.3.3.1 Ductile and Brittle Regime 
505 8 |a 3.3.3.2 Calculation of Material Removal Rate3.3.4 Kinematics; 3.3.4.1 Sliding Velocity; 3.3.4.2 Equation for Streaks on a Work Piece; 3.3.4.3 Equations for Streaks on a Lap; 3.3.4.4 Effects of Different Parameters on Material Removal Rate; Effect of Lapping Pressure on the MRR; Effect of Abrasive Size on the MRR; 3.3.5 Types of Lapping (Focus: Double-Sided Lapping); 3.3.5.1 Double-Sided Lapping; 3.3.5.2 Mechanism; 3.3.5.3 Machine Set-up; 3.3.5.4 Process Cycle; 3.3.5.5 Advantages of Double-Sided Lapping; 3.3.5.6 Parameters of Double-Sided Lapping; 3.3.5.7 Lapping with Bonded Abrasives 
505 8 |a 3.3.5.8 Process Capabilities for Lapping3.3.6 Abrasives and Lubricants; 3.3.6.1 Types of Abrasives; (1) Diamond; (2) Cubic Boron Nitride (CBN); (3) Norbide Abrasive; (4) Silicon Carbide; (5) Aluminum Oxide; (6) Fused Aluminas; (7) Corundum; (8) Garnet; (9) Unfused Alumina (hydrated-calcined); (10) Micro-Graded Flours; (11) Linde Powders; (12) Other Abrasive Materials; 3.3.7 Equipment; 3.3.7.1 Lapping Plate; 3.3.7.2 Charging of the Lapping Plate; 3.3.7.3 Different Types of Lapping Plate; 3.3.7.4 Carriers Used in Double-Sided Lapping; 3.3.7.5 Ultrasonic Cleaner; 3.3.8 Abrasive Slurry 
505 8 |a 3.3.8.1 Abrasives3.3.9 Introduction to Silicon; 3.3.10 Lapping of Silicon Wafers -- Experiments; 3.3.10.1 Mounting the Wafer; 3.3.10.2 Double-Sided Lapping Kinematics; 3.3.10.3 Lapping Process; 3.3.10.4 Effects of Lapping Wheels; 3.3.10.5 Slurry and Its Effects; 3.3.10.6 Silicon Machining; 3.3.10.7 Common Lapping Wheel Problems and Solutions; 3.3.11 Lapping Machine; 3.3.12 Experimental Set-up; 3.3.13 Experimental Results; Plots; Equations Used to Calculate the Material Removal Rate; Observations; 3.3.14 Conclusions; 3.4 Etching; 3.4.1 Acid Etching of Silicon; 3.4.2 Alkaline Etching of Silicon 
590 |a Knovel  |b ACADEMIC - Electronics & Semiconductors 
650 0 |a Grinding and polishing. 
650 7 |a TECHNOLOGY & ENGINEERING  |x Technical & Manufacturing Industries & Trades.  |2 bisacsh 
650 7 |a Grinding and polishing.  |2 fast  |0 (OCoLC)fst00947952 
700 1 |a Doi, Toshiro K.,  |d 1947- 
700 1 |a Marinescu, Ioan D. 
700 1 |a Kurokawa, Syuhei. 
776 0 8 |i Print version:  |t Advances in CMP/polishing technologies for the manufacture of electronic devices.  |b 1st ed.  |d Oxford ; Waltham, MA : Elsevier, 2012  |z 9781437778595  |w (DLC) 2012359712  |w (OCoLC)740631119 
856 4 0 |u https://appknovel.uam.elogim.com/kn/resources/kpACMPPTM3/toc  |z Texto completo 
938 |a ebrary  |b EBRY  |n ebr10518412 
938 |a EBSCOhost  |b EBSC  |n 453942 
938 |a YBP Library Services  |b YANK  |n 7296888 
994 |a 92  |b IZTAP 

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