Silicon carbide and related materials 2013 /

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The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invi...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Conference on Silicon Carbide and Related Materials Miyazaki-shi, Japan
Otros Autores: Okumura, Hajime (Editor )
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Switzerland : Trans Tech Publications, 2014.
Colección:Materials science forum ; v. 778-780.
Temas:
Silicon carbide > Congresses.
Silicon carbide > Electric properties > Congresses.
Silicon-carbide thin films > Congresses.
Nitrides > Congresses.
Graphene > Congresses.
Crystal growth > Congresses.
Wide gap semiconductors > Materials > Congresses.
Wide gap semiconductors > Materials > Technological innovations > Congresses.
Couches minces de carbure de silicium > Congrès.
Nitrures > Congrès.
Graphène > Congrès.
Cristaux > Croissance > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Innovations > Congrès.
TECHNOLOGY & ENGINEERING > Mechanical.
Crystal growth
Graphene
Nitrides
Silicon carbide
Silicon carbide > Electric properties
Silicon-carbide thin films
Conference papers and proceedings
Acceso en línea:Texto completo
Descripción
Sumario:The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T.
Notas:"The 15th International Conference on Silicon Carbide and Related Materials (ICSCRM2013) was held in Miyazaki, Japan, from September 29 through October 4, 2013. The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Preface
Descripción Física:1 online resource (1205 pages) : illustrations (some color)
Bibliografía:Includes bibliographical references and indexes.
ISBN:9783038263913
3038263915
ISSN:0255-5476 ;
1662-9752

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