Silicon carbide and related materials 2013 /

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The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invi...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Conference on Silicon Carbide and Related Materials Miyazaki-shi, Japan
Otros Autores: Okumura, Hajime (Editor )
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Switzerland : Trans Tech Publications, 2014.
Colección:Materials science forum ; v. 778-780.
Temas:
Silicon carbide > Congresses.
Silicon carbide > Electric properties > Congresses.
Silicon-carbide thin films > Congresses.
Nitrides > Congresses.
Graphene > Congresses.
Crystal growth > Congresses.
Wide gap semiconductors > Materials > Congresses.
Wide gap semiconductors > Materials > Technological innovations > Congresses.
Couches minces de carbure de silicium > Congrès.
Nitrures > Congrès.
Graphène > Congrès.
Cristaux > Croissance > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Innovations > Congrès.
TECHNOLOGY & ENGINEERING > Mechanical.
Crystal growth
Graphene
Nitrides
Silicon carbide
Silicon carbide > Electric properties
Silicon-carbide thin films
Conference papers and proceedings
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