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Defects and diffusion in semiconductors : an annual retrospective XIV /
A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized in...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Durnten-Zurich :
TTP,
[2012]
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| Colección: | Diffusion and defect data. Defect and diffusion forum ;
v. 332. |
| Temas: | |
| Acceso en línea: | Texto completo |