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Gettering and defect engineering in semiconductor technology XIII : GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 /
This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices. The volume comprises 93 contributions; among them, 14 invited papers, from more than 20 different countries. The invited papers, subm...
| Clasificación: | Libro Electrónico |
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| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Stafa-Zuerich, Switzerland :
Trans Tech Publications,
©2010.
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| Colección: | Diffusion and defect data. Solid state phenomena ;
v. 156/158. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Gettering and Defect Engineering in Semiconductor Technology XIII; Preface; Committeess; Table of Contents; I. Multi-Crystalline Silicon for Solar Cells; Influence of Defects on Solar Cell Characteristics; Dislocation Engineering in Multicrystalline Silicon; Grain Boundaries in Multicrystalline Si; Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon; Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells; Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon.
- Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline SiliconAn Investigation into Fracture of Multi-Crystalline Silicon; II. Advanced Semiconductor Materials: Strained Si, SOI, SiGe, SiC; Strained Silicon Devices; Novel Trends in SOI Technology for CMOS Applications; Advanced Si-based Semiconductors for Energy and Photonic Applications; Si Wafer Bonding: Structural Features of the Interface; Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing.
- Growth of Heavily Phosphorus-Doped (111) Silicon CrystalsSemi-Insulating Silicon for Microwave Devices; III. Impurities (Oxygen, Carbon, Nitrogen, Metals) and Point Defects in Si and SiGe; Can Impurities be Beneficial to Photovoltaics?; Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors; The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures; Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies.
- Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon CrystalsVacancies and Self-Interstitials Dynamics in Silicon Wafers; Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface; Anomalous Out-Diffusion Profiles of Nitrogen in Silicon; DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon ; Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing; Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms.
- Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium LayersOxygen Diffusion in Si1-xGex Alloys; The Effect of Germanium Doping on the Production of Carbon-Related Defects in Electron-Irradiated Czochralski Silicon; IV. Modeling and Simulation of Growth, Gettering and Characterization; Numerical Analysis of mc-Si Crystal Growth; Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates; Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects.