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Gettering and defect engineering in semiconductor technology XIII : GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 /
This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices. The volume comprises 93 contributions; among them, 14 invited papers, from more than 20 different countries. The invited papers, subm...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Stafa-Zuerich, Switzerland :
Trans Tech Publications,
©2010.
|
| Colección: | Diffusion and defect data. Solid state phenomena ;
v. 156/158. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" |n (13th : |d 2009 : |c Dölnsee-Schorfheide, Germany) | |
| 245 | 1 | 0 | |a Gettering and defect engineering in semiconductor technology XIII : |b GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / |c edited by M. Kittler and H. Richter. |
| 246 | 3 | 0 | |a GADEST 2009 |
| 260 | |a Stafa-Zuerich, Switzerland : |b Trans Tech Publications, |c ©2010. | ||
| 300 | |a 1 online resource (xiv, 592 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Solid state phenomena, |x 1012-0394 ; |v v. 156-158 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Gettering and Defect Engineering in Semiconductor Technology XIII; Preface; Committeess; Table of Contents; I. Multi-Crystalline Silicon for Solar Cells; Influence of Defects on Solar Cell Characteristics; Dislocation Engineering in Multicrystalline Silicon; Grain Boundaries in Multicrystalline Si; Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon; Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells; Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon. | |
| 505 | 8 | |a Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline SiliconAn Investigation into Fracture of Multi-Crystalline Silicon; II. Advanced Semiconductor Materials: Strained Si, SOI, SiGe, SiC; Strained Silicon Devices; Novel Trends in SOI Technology for CMOS Applications; Advanced Si-based Semiconductors for Energy and Photonic Applications; Si Wafer Bonding: Structural Features of the Interface; Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing. | |
| 505 | 8 | |a Growth of Heavily Phosphorus-Doped (111) Silicon CrystalsSemi-Insulating Silicon for Microwave Devices; III. Impurities (Oxygen, Carbon, Nitrogen, Metals) and Point Defects in Si and SiGe; Can Impurities be Beneficial to Photovoltaics?; Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors; The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures; Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies. | |
| 505 | 8 | |a Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon CrystalsVacancies and Self-Interstitials Dynamics in Silicon Wafers; Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface; Anomalous Out-Diffusion Profiles of Nitrogen in Silicon; DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon ; Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing; Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms. | |
| 505 | 8 | |a Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium LayersOxygen Diffusion in Si1-xGex Alloys; The Effect of Germanium Doping on the Production of Carbon-Related Defects in Electron-Irradiated Czochralski Silicon; IV. Modeling and Simulation of Growth, Gettering and Characterization; Numerical Analysis of mc-Si Crystal Growth; Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates; Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects. | |
| 520 | |a This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices. The volume comprises 93 contributions; among them, 14 invited papers, from more than 20 different countries. The invited papers, submitted by internationally recognized experts in the field, review the state-of-the-art and likely future trends in their respective research field. Upon comparing this volume with previous volumes, it is clearly seen that defect engineering in photovoltaics is becoming a topic of ever-increasing inte. | ||
| 546 | |a English. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Semiconductors |v Congresses. | |
| 650 | 0 | |a Solid state electronics |v Congresses. | |
| 650 | 6 | |a Semi-conducteurs |v Congrès. | |
| 650 | 6 | |a Électronique de l'état solide |v Congrès. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Engineering (General) |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Reference. |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Solid state electronics |2 fast | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
| 700 | 1 | |a Kittler, Martin. | |
| 700 | 1 | |a Richter, H., |d 1940- | |
| 776 | 0 | 8 | |i Print version: |a International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" (13th : 2009 : Dölnsee-Schorfheide, Germany). |t Gettering and defect engineering in semiconductor technology XIII. |d Stafa-Zuerich, Switzerland : Trans Tech Publications, ©2010 |z 9783908451747 |w (OCoLC)505417272 |
| 830 | 0 | |a Diffusion and defect data. |n Pt. B, |p Solid state phenomena ; |v v. 156/158. | |
| 856 | 4 | 0 | |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=503559 |z Texto completo |
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