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GaN-based materials and devices : growth, fabrication, characterization and performance /

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentratio...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Shur, Michael, Davis, Robert F. (Robert Foster), 1942-
Formato: Electrónico eBook
Idioma:Inglés
Publicado: River Edge, N.J. ; London : World Scientific., ©2004.
Colección:Selected topics in electronics and systems ; v. 33.
Temas:
Acceso en línea:Texto completo