Silicon-germanium heterojunction bipolar transistors /

This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, his...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Cressler, John D.
Otros Autores: Niu, Guofu
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Boston, MA : Artech House, ©2003.
Temas:
Bipolar transistors.
Germanium.
Germanium
Transistors bipolaires.
germanium.
TECHNOLOGY & ENGINEERING > Electronics > Transistors.
Bipolar transistors
Acceso en línea:Texto completo

MARC

LEADER 00000cam a2200000 a 4500
001 EBSCO_ocm53004108
003 OCoLC
005 20231017213018.0
006 m o d
007 cr cn|||||||||
008 030910s2003 maua ob 001 0 eng d
040 |a N$T  |b eng  |e pn  |c N$T  |d YDXCP  |d OCLCQ  |d TUU  |d OCLCQ  |d TNF  |d OCLCQ  |d OCLCF  |d OCLCO  |d NLGGC  |d OCLCQ  |d SLY  |d OCLCQ  |d PIFBR  |d OCLCQ  |d WY@  |d LUE  |d VTS  |d AGLDB  |d INT  |d TOF  |d CUY  |d OCLCQ  |d STF  |d UKAHL  |d K6U  |d IEEEE  |d OCLCO  |d OCLCQ  |d OCLCO 
019 |a 880334930  |a 961684838  |a 962722240  |a 991981252  |a 1053324952 
020 |a 1580535992  |q (electronic bk.) 
020 |a 9781580535991  |q (electronic bk.) 
029 1 |a AU@  |b 000051412000 
029 1 |a DEBBG  |b BV043098084 
029 1 |a DEBSZ  |b 422417505 
029 1 |a GBVCP  |b 801065496 
035 |a (OCoLC)53004108  |z (OCoLC)880334930  |z (OCoLC)961684838  |z (OCoLC)962722240  |z (OCoLC)991981252  |z (OCoLC)1053324952 
050 4 |a TK7871.96.B55  |b C74 2002eb 
072 7 |a TEC  |x 008110  |2 bisacsh 
082 0 4 |a 621.3815/28  |2 22 
084 |a TN322  |2 clc 
084 |a TN325  |2 clc 
049 |a UAMI 
100 1 |a Cressler, John D. 
245 1 0 |a Silicon-germanium heterojunction bipolar transistors /  |c John D. Cressler, Guofu Niu. 
260 |a Boston, MA :  |b Artech House,  |c ©2003. 
300 |a 1 online resource (xviii, 570 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record. 
520 3 |a This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.  |c Publisher abstract. 
590 |a eBooks on EBSCOhost  |b EBSCO eBook Subscription Academic Collection - Worldwide 
650 0 |a Bipolar transistors. 
650 0 |a Germanium. 
650 2 |a Germanium 
650 6 |a Transistors bipolaires. 
650 6 |a Germanium. 
650 7 |a germanium.  |2 aat 
650 7 |a TECHNOLOGY & ENGINEERING  |x Electronics  |x Transistors.  |2 bisacsh 
650 0 7 |a Germanium.  |2 cct 
650 0 7 |a Bipolar transistors.  |2 cct 
650 7 |a Bipolar transistors  |2 fast 
650 7 |a Germanium  |2 fast 
700 1 |a Niu, Guofu. 
776 0 8 |i Print version:  |a Cressler, John D.  |t Silicon-germanium heterojunction bipolar transistors.  |d Boston, MA : Artech House, ©2003  |z 1580533612  |w (DLC) 2002038276  |w (OCoLC)50919766 
856 4 0 |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=87713  |z Texto completo 
938 |a Askews and Holts Library Services  |b ASKH  |n AH20050044 
938 |a EBSCOhost  |b EBSC  |n 87713 
938 |a IEEE  |b IEEE  |n 9100198 
938 |a YBP Library Services  |b YANK  |n 2358663 
994 |a 92  |b IZTAP 

Ejemplares similares