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Silicon-germanium heterojunction bipolar transistors /

This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, his...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Cressler, John D.
Otros Autores: Niu, Guofu
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Boston, MA : Artech House, ©2003.
Temas:
Acceso en línea:Texto completo
Descripción
Sumario:This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Descripción Física:1 online resource (xviii, 570 pages) : illustrations
Bibliografía:Includes bibliographical references and index.
ISBN:1580535992
9781580535991