Leakage Current and Defect Characterization of Short Channel MOSFETs.

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Roll, Guntrade
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Berlin : Logos Verlag Berlin, 2012.
Colección:Research at NaMLab Ser.
Temas:
Metal oxide semiconductor field-effect transistors.
Transistors MOSFET.
Metal oxide semiconductor field-effect transistors
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Intro; 1 Introduction; 2 Fundamentals of Leakage Currents in MOSFET Devices; 2.1 Leakage through Gate Oxide; 2.1.1 Thermally Activated Gate Leakage; 2.1.2 Tunneling Leakage Through the Gate Dielectric; 2.2 Subthreshold Leakage from Source to Drain; 2.3 Leakage from Silicon Space Charge Regions to Transistor Bulk; 2.3.1 Leakage Current Mechanisms; 2.3.2 Perimeter Leakage from Source/Drain to Bulk; 2.3.3 Generation Leakage from Channel Region to Bulk; 3 Methodology; 3.1 Current Voltage Measurement; 3.1.1 Basic Current Voltage Characteristics; 3.1.2 Separation of Leakage Pathâ#x80;#x99;s.
  • 3.1.3 Gated Diode Measurement3.2 Capacitance Voltage Measurement; 3.3 Charge Pumping Measurement; 3.4 Simulation; 3.4.1 Spice Simulation; 3.4.2 TCAD Simulation; 4 Impact of Implant Variations on PFET Leakage Current; 4.1 Process Flow; 4.2 TCAD Simulation of the Process; 4.3 Interface Traps; 4.4 Electrical Measurement and Simulation of Leakage Current; 4.4.1 Source/Drain Leakage; 4.4.2 Source/Drain Extension Leakage; 4.4.3 Generation Leakage from Channel Region to Bulk; 4.4.4 Gate Induced Drain Leakage; 4.4.5 Verification of the Defect Model: Gated Diode Measurement; 4.4.6 Gate Leakage.
  • 4.4.7 Subthreshold Leakage4.4.8 Conclusion; 4.5 Carbon Implantation into Junction Extension; 4.5.1 Description of Experiment; 4.5.2 Electrical Characterization of Transistor Performance; 4.5.3 Interface Traps; 4.5.4 Carbon Dose Dependent Leakage Current; 4.5.5 Conclusion; 4.6 Arsenic and Phosphorus Implantation for Threshold Voltage Control; 4.6.1 Description of Experiment; 4.6.2 Electrical Characterization of Transistor Performance; 4.6.3 Leakage Current Dependent on Halo- and Vth Implant; 4.6.4 Conclusion; 5 Impact of High-k Process Adjustment on Transistor Leakage Current.
  • 5.1 High-k Process Flow5.2 TCAD Simulation of the Process; 5.3 Interface Traps; 5.4 Electrical Measurement and Simulation of Leakage Current; 5.4.1 Source/Drain Leakage; 5.4.2 Source/Drain Extension Leakage; 5.4.3 Generation Leakage from Channel Region to Bulk; 5.4.4 Gate Induced Drain Leakage; 5.4.5 Gate Leakage; 5.4.6 Subthreshold Leakage; 5.4.7 Conclusion; 5.5 Comparison of Silicon Oxide and Silicon Nitride Extension Spacer; 5.5.1 Description of Experiment; 5.5.2 Electrical Characterization of Transistor Performance; 5.5.3 Leakage Current Dependence on the Spacer Dielectric.
  • 5.5.4 Conclusion5.6 Germanium Implantation during Gate Patterning; 5.6.1 Description of Experiment; 5.6.2 Electrical Characterization of Transistor Performance; 5.6.3 Leakage Current Dependence on the Gate Patterning Process; 5.6.4 Conclusion; 6 Summary and Outlook; 6.1 Leakage Currents and Defect Distribution; 6.2 Carbon in the Junction Extension; 6.3 Vth- and Halo Implant; 6.4 Silicon Oxynitride vs. Hafnium Silicon Oxide Gate Dielectric; 6.4.1 Silicon Oxide vs. Silicon Nitride Extension Spacer; 6.4.2 Germanium Implantation for Gate Patterning; 6.5 Outlook; 7 Bibliography.

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