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Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films.
Annotation
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin :
Logos Verlag Berlin,
2015.
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| Colección: | Research at NaMLab Ser.
|
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Intro; 1 Introduction; 2 Fundamentals; 2.1 Non-volatile semiconductor memories; 2.2 Emerging memory concepts; 2.3 Ferroelectric memories; 3 Characterisation methods; 3.1 Memory characterisation tests; 3.2 Ferroelectric memory specific characterisation tests; 3.3 Trapping characterisation methods; 3.4 Microstructural analyses; 4 Sample description; 4.1 Metal-insulator-metal capacitors; 4.2 Ferroelectric field effect transistors; 5 Stabilisation of the ferroelectric properties in Si:HfO2 thin films; 5.1 Impact of the silicon doping; 5.2 Impact of the post-metallisation anneal.
- 5.3 Impact of the film thickness5.4 Summary; 6 Electrical properties of the ferroelectric Si:HfO2 thin films; 6.1 Field cycling effect; 6.2 Switching kinetics; 6.3 Fatigue behaviour; 6.4 Summary; 7 Ferroelectric field effect transistors based on Si:HfO2 films; 7.1 Effect of the silicon doping; 7.2 Program and erase operation; 7.3 Retention behaviour; 7.4 Endurance properties; 7.5 Impact of scaling on the device performance; 7.6 Summary; 8 Trapping effects in Si:HfO2-based FeFETs; 8.1 Trapping kinetics of the bulk Si:HfO2 traps; 8.2 Detrapping kinetics of the bulk Si:HfO2 traps.
- 8.3 Impact of trapping on the FeFET performance8.4 Modified approach for erase operation; 8.5 Summary; 9 Summary and Outlook.