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Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films.
Annotation
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin :
Logos Verlag Berlin,
2015.
|
| Colección: | Research at NaMLab Ser.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000Mu 4500 | ||
|---|---|---|---|
| 001 | EBOOKCENTRAL_on1021808362 | ||
| 003 | OCoLC | ||
| 005 | 20240329122006.0 | ||
| 006 | m o d | ||
| 007 | cr |n|---||||| | ||
| 008 | 180203s2015 gw o 000 0 eng d | ||
| 010 | |a 2016440253 | ||
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| 019 | |a 1022080450 |a 1249236705 |a 1272920880 | ||
| 020 | |a 9783832594787 | ||
| 020 | |a 3832594787 | ||
| 020 | |z 9783832540036 | ||
| 020 | |z 3832540032 | ||
| 029 | 1 | |a AU@ |b 000068474388 | |
| 035 | |a (OCoLC)1021808362 |z (OCoLC)1022080450 |z (OCoLC)1249236705 |z (OCoLC)1272920880 | ||
| 050 | 4 | |a QD181.H5 |b .Y873 2015 | |
| 082 | 0 | 4 | |a 661.0514 |2 23 |
| 049 | |a UAMI | ||
| 100 | 1 | |a Yurchuk, Ekaterina. | |
| 245 | 1 | 0 | |a Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films. |
| 260 | |a Berlin : |b Logos Verlag Berlin, |c 2015. | ||
| 300 | |a 1 online resource (186 pages). | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Research at NaMLab Ser. ; |v v. 4 | |
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Intro; 1 Introduction; 2 Fundamentals; 2.1 Non-volatile semiconductor memories; 2.2 Emerging memory concepts; 2.3 Ferroelectric memories; 3 Characterisation methods; 3.1 Memory characterisation tests; 3.2 Ferroelectric memory specific characterisation tests; 3.3 Trapping characterisation methods; 3.4 Microstructural analyses; 4 Sample description; 4.1 Metal-insulator-metal capacitors; 4.2 Ferroelectric field effect transistors; 5 Stabilisation of the ferroelectric properties in Si:HfO2 thin films; 5.1 Impact of the silicon doping; 5.2 Impact of the post-metallisation anneal. | |
| 505 | 8 | |a 5.3 Impact of the film thickness5.4 Summary; 6 Electrical properties of the ferroelectric Si:HfO2 thin films; 6.1 Field cycling effect; 6.2 Switching kinetics; 6.3 Fatigue behaviour; 6.4 Summary; 7 Ferroelectric field effect transistors based on Si:HfO2 films; 7.1 Effect of the silicon doping; 7.2 Program and erase operation; 7.3 Retention behaviour; 7.4 Endurance properties; 7.5 Impact of scaling on the device performance; 7.6 Summary; 8 Trapping effects in Si:HfO2-based FeFETs; 8.1 Trapping kinetics of the bulk Si:HfO2 traps; 8.2 Detrapping kinetics of the bulk Si:HfO2 traps. | |
| 505 | 8 | |a 8.3 Impact of trapping on the FeFET performance8.4 Modified approach for erase operation; 8.5 Summary; 9 Summary and Outlook. | |
| 520 | 8 | |a Annotation |b Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour. | |
| 504 | |a Includes bibliographical references. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Hafnium. | |
| 650 | 0 | |a Ferroelectric crystals. | |
| 650 | 6 | |a Hafnium. | |
| 650 | 6 | |a Cristaux ferroélectriques. | |
| 650 | 7 | |a Ferroelectric crystals |2 fast | |
| 650 | 7 | |a Hafnium |2 fast | |
| 758 | |i has work: |a Electrical characterisation of ferroelectric field effect transistors based on ferroelectirc HfO2 thin films (Text) |1 https://id.oclc.org/worldcat/entity/E39PCY8GdV7Byvx9FTDkrCBybd |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Yurchuk, Ekaterina. |t Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films. |d Berlin : Logos Verlag Berlin, ©2015 |z 9783832540036 |
| 830 | 0 | |a Research at NaMLab Ser. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=5247140 |z Texto completo |
| 938 | |a EBL - Ebook Library |b EBLB |n EBL5247140 | ||
| 938 | |a YBP Library Services |b YANK |n 15138915 | ||
| 994 | |a 92 |b IZTAP | ||