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Lithography /
Lithography is now a complex tool at the heart of a technological process for manufacturing micro and nanocomponents. A multidisciplinary technology, lithography continues to push the limits of optics, chemistry, mechanics, micro and nano-fluids, etc. This book deals with essential technologies and...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London :
Wiley,
2013.
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| Colección: | ISTE.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Cover; Title Page; Copyright Page; Table of Contents; Foreword; Introduction; Chapter 1. Photolithography; 1.1. Introduction; 1.2. Principles and technology of scanners; 1.2.1. Illumination; 1.2.2. The mask or reticle; 1.2.3. Projection optics; 1.2.4. Repeated projection and scanning projection; 1.3. Lithography processes; 1.3.1. Anti-reflective coating; 1.3.2. Resists; 1.3.3. Barrier layers or top coating
- 1.4. Immersion photolithography; 1.4.1. Immersion lithography; 1.4.2. Resolution improvement; 1.4.3. Relevance of immersion lithography; 1.4.4. Immersion liquids.
- 1.4.5. Immersion scanners1.4.6. Immersion specific constraints and issues; 1.5. Image formation; 1.6. Lithography performances enhancement techniques; 1.6.1. Off axis illumination (OAI); 1.6.2. Optical proximity corrections (OPC); 1.6.3. Phase shift masks (PSM); 1.7. Contrast; 1.7.1. Polarized light contrast; 1.7.2. Influence of contrast on roughness; 1.8. Bibliography; Chapter 2. Extreme Ultraviolet Lithography; 2.1. Introduction to extreme ultraviolet lithography; 2.1.1. Chapter introduction.
- 2.1.2. Extreme ultraviolet lithography: the successor of optical lithography at 248 nm and 193 nm wavelengths2.1.3. The spectral range of extreme ultraviolet; 2.1.4. Choice of wavelength and resolution limit for EUV lithography; 2.2. The electromagnetic properties of materials and the complex index; 2.2.1. Wave vector and complex index; 2.2.2. Scattering and absorption: the electromagnetic origin of the refractive index; 2.2.3. Light propagation and refractive index; 2.2.4. Reflection and transmission of a monochromatic wave; 2.3. Reflective optical elements for EUV lithography.
- 2.3.1. The interferential mirror principle: Bragg structure2.3.2. Reflective optics: conception and fabrication; 2.3.3. Projection optics for EUV lithography; 2.4. Reflective masks for EUV lithography; 2.4.1. Different mask types; 2.4.2. Manufacturing processes for EUV masks; 2.4.3. Mask defectivity; 2.5. Modeling and simulation for EUV lithography; 2.5.1. Simulation, a conceptional tool; 2.5.2. Simulation methods; 2.6. EUV lithography sources; 2.6.1. Constitutive elements of a plasma source; 2.6.2. Specifications for an EUV source; 2.6.3. EUV sources; 2.7. Conclusion.
- 2.8. Appendix: Kramers-Krönig relationship2.9. Bibliography; Chapter 3. Electron Beam Lithography; 3.1. Introduction; 3.2. Different equipment, its operation and limits: current and future solutions; 3.2.1. Gaussian beam; 3.2.2. Shaped electron beam; 3.2.3. Multi-electron beam; 3.3. Maskless photolithography; 3.3.1. Optical lithography without a mask; 3.3.2. Charged particle maskless lithography; 3.4. Alignment; 3.5. Electron-sensitive resists; 3.6. Electron-matter interaction; 3.7. Physical effect of electronic bombardment in the target; 3.7.1. Polymerizing, chemical bond breaking.