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Gan-based Materials And Devices : Growth, Fabrication, Characterization And Performance.
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration at...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore :
World Scientific,
2004.
|
| Edición: | 33th ed. |
| Colección: | Selected topics in electronics and systems ;
v. 33. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Shur, Michael. | |
| 245 | 1 | 0 | |a Gan-based Materials And Devices : |b Growth, Fabrication, Characterization And Performance. |
| 250 | |a 33th ed. | ||
| 260 | |a Singapore : |b World Scientific, |c 2004. | ||
| 300 | |a 1 online resource (295 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Selected topics in electronics and systems ; |v v. 33 | |
| 520 | |a The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Preface; CONTENTS; Materials Properties of Nitrides. Summary; Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy; Strain of GaN Layers Grown Using 6H-SiC(0001) Substrates with Different Buffer Layers; Growth of Thick GaN Films and Seeds for Bulk Crystal Growth; Cracking of GaN Films; Direct Bonding of GaN and SiC; A Novel Technique for Electronic Device Fabrication; Electronic Properties of GaN (0001) -- Dielectronic Interfaces; Transport and Noise Properties; Quasi-Ballistic and Overshoot Transport in Group III-Nitrides; High Field Transport in AIN. | |
| 505 | 8 | |a Generation-Recombination Noise in GaN-Based DevicesInsulated Gate III-N Heterostructure Field-Effect Transistors; High Voltage AIGaN/GaN Heterojunction Transistors; Etched Aperture GaN CAVET Through Photoelectrochemical Wet Etching; n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion. | |
| 504 | |a Includes bibliographical references. | ||
| 546 | |a English. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Gallium nitride, Semiconductors |x Materials. | |
| 700 | 1 | |a Davis, Robert F. |q (Robert Foster), |d 1942- |1 https://id.oclc.org/worldcat/entity/E39PBJh4rJVGBd8dWYmvXwTj4q | |
| 758 | |i has work: |a GaN-based materials and devices (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFQ78dcCKYCxHf3K3pdYT3 |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 1 | |z 9789812388445 | |
| 830 | 0 | |a Selected topics in electronics and systems ; |v v. 33. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=227133 |z Texto completo |
| 938 | |a EBL - Ebook Library |b EBLB |n EBL227133 | ||
| 994 | |a 92 |b IZTAP | ||