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Gan-based Materials And Devices : Growth, Fabrication, Characterization And Performance.
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration at...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore :
World Scientific,
2004.
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| Edición: | 33th ed. |
| Colección: | Selected topics in electronics and systems ;
v. 33. |
| Temas: | |
| Acceso en línea: | Texto completo |
| Sumario: | The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising. |
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| Descripción Física: | 1 online resource (295 pages) |
| Bibliografía: | Includes bibliographical references. |
| ISBN: | 9789812562364 9812562362 1281347620 9781281347626 9786611347628 6611347623 |