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Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications /

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics an...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: SpringerLink (Online service)
Otros Autores: Park, Byung-Eun (Editor ), Ishiwara, Hiroshi (Editor ), Okuyama, Masanori (Editor ), Sakai, Shigeki (Editor ), Yoon, Sung-Min (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Dordrecht : Springer Netherlands : Imprint: Springer, 2016.
Edición:1st ed. 2016.
Colección:Topics in Applied Physics, 131
Temas:
Acceso en línea:Texto Completo