Variation-Aware Advanced CMOS Devices and SRAM
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications o...
Clasificación: | Libro Electrónico |
---|---|
Autor principal: | Shin, Changhwan (Autor) |
Autor Corporativo: | SpringerLink (Online service) |
Formato: | Electrónico eBook |
Idioma: | Inglés |
Publicado: |
Dordrecht :
Springer Netherlands : Imprint: Springer,
2016.
|
Edición: | 1st ed. 2016. |
Colección: | Springer Series in Advanced Microelectronics,
56 |
Temas: | |
Acceso en línea: | Texto Completo |
Ejemplares similares
-
Physics of Semiconductor Devices
por: Rudan, Massimo
Publicado: (2015) -
Robust SRAM Designs and Analysis
por: Singh, Jawar, et al.
Publicado: (2013) -
Bias Temperature Instability for Devices and Circuits
Publicado: (2014) -
Design Exploration of Emerging Nano-scale Non-volatile Memory
por: Yu, Hao, et al.
Publicado: (2014) -
SRAM Design for Wireless Sensor Networks Energy Efficient and Variability Resilient Techniques /
por: Sharma, Vibhu, et al.
Publicado: (2013)