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Variation-Aware Advanced CMOS Devices and SRAM

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications o...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Shin, Changhwan (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Dordrecht : Springer Netherlands : Imprint: Springer, 2016.
Edición:1st ed. 2016.
Colección:Springer Series in Advanced Microelectronics, 56
Temas:
Acceso en línea:Texto Completo