Poly-SiGe for MEMS-above-CMOS Sensors

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Gonzalez Ruiz, Pilar (Autor), De Meyer, Kristin (Autor), Witvrouw, Ann (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Dordrecht : Springer Netherlands : Imprint: Springer, 2014.
Edición:1st ed. 2014.
Colección:Springer Series in Advanced Microelectronics, 44
Temas:
Electronic circuits.
Optical materials.
Microtechnology.
Microelectromechanical systems.
Materials-Analysis.
Electronic Circuits and Systems.
Optical Materials.
Microsystems and MEMS.
Characterization and Analytical Technique.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • Acknowledgements
  • Abstract
  • Symbols and Abbreviations
  • Introduction
  • Poly-SiGe As Piezoresistive Material
  • Design of a Poly-SiGe Piezoresistive Pressure Sensor
  • The Pressure Sensor Fabrication Process
  • Sealing of Surface Micromachined Poly-SiGe Cavities
  • Characterization of Poly-SiGe pressure sensors
  • CMOS Integrated Poly-SiGe Piezoresistive Pressure Sensor
  • Conclusions And Future Work
  • Appendix A
  • Appendix B
  • Appendix C
  • Appendix D.

Ejemplares similares