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Strain-Induced Effects in Advanced MOSFETs

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor fil...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Sverdlov, Viktor (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Vienna : Springer Vienna : Imprint: Springer, 2011.
Edición:1st ed. 2011.
Colección:Computational Microelectronics
Temas:
Acceso en línea:Texto Completo

MARC

LEADER 00000nam a22000005i 4500
001 978-3-7091-0382-1
003 DE-He213
005 20220114145721.0
007 cr nn 008mamaa
008 110106s2011 au | s |||| 0|eng d
020 |a 9783709103821  |9 978-3-7091-0382-1 
024 7 |a 10.1007/978-3-7091-0382-1  |2 doi 
050 4 |a TK7800-8360 
072 7 |a TJF  |2 bicssc 
072 7 |a TEC008000  |2 bisacsh 
072 7 |a TJF  |2 thema 
082 0 4 |a 621.381  |2 23 
100 1 |a Sverdlov, Viktor.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
245 1 0 |a Strain-Induced Effects in Advanced MOSFETs  |h [electronic resource] /  |c by Viktor Sverdlov. 
250 |a 1st ed. 2011. 
264 1 |a Vienna :  |b Springer Vienna :  |b Imprint: Springer,  |c 2011. 
300 |a XIV, 252 p. 101 illus.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
490 1 |a Computational Microelectronics 
520 |a Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given. 
650 0 |a Electronics. 
650 1 4 |a Electronics and Microelectronics, Instrumentation. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer Nature eBook 
776 0 8 |i Printed edition:  |z 9783709103814 
776 0 8 |i Printed edition:  |z 9783709103838 
776 0 8 |i Printed edition:  |z 9783709119334 
830 0 |a Computational Microelectronics 
856 4 0 |u https://doi.uam.elogim.com/10.1007/978-3-7091-0382-1  |z Texto Completo 
912 |a ZDB-2-ENG 
912 |a ZDB-2-SXE 
950 |a Engineering (SpringerNature-11647) 
950 |a Engineering (R0) (SpringerNature-43712)