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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2016.
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| Edición: | 1st ed. 2016. |
| Colección: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
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| 001 | 978-3-662-49683-1 | ||
| 003 | DE-He213 | ||
| 005 | 20220203133858.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 160324s2016 gw | s |||| 0|eng d | ||
| 020 | |a 9783662496831 |9 978-3-662-49683-1 | ||
| 024 | 7 | |a 10.1007/978-3-662-49683-1 |2 doi | |
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| 100 | 1 | |a Li, Zhiqiang. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 4 | |a The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices |h [electronic resource] / |c by Zhiqiang Li. |
| 250 | |a 1st ed. 2016. | ||
| 264 | 1 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg : |b Imprint: Springer, |c 2016. | |
| 300 | |a XIV, 59 p. 52 illus., 49 illus. in color. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 490 | 1 | |a Springer Theses, Recognizing Outstanding Ph.D. Research, |x 2190-5061 | |
| 505 | 0 | |a Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions. | |
| 520 | |a This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Electronic circuits. | |
| 650 | 0 | |a Nanoscience. | |
| 650 | 0 | |a Condensed matter. | |
| 650 | 1 | 4 | |a Semiconductors. |
| 650 | 2 | 4 | |a Electronic Circuits and Systems. |
| 650 | 2 | 4 | |a Nanophysics. |
| 650 | 2 | 4 | |a Condensed Matter Physics. |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9783662496817 |
| 776 | 0 | 8 | |i Printed edition: |z 9783662496824 |
| 776 | 0 | 8 | |i Printed edition: |z 9783662570265 |
| 830 | 0 | |a Springer Theses, Recognizing Outstanding Ph.D. Research, |x 2190-5061 | |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-3-662-49683-1 |z Texto Completo |
| 912 | |a ZDB-2-PHA | ||
| 912 | |a ZDB-2-SXP | ||
| 950 | |a Physics and Astronomy (SpringerNature-11651) | ||
| 950 | |a Physics and Astronomy (R0) (SpringerNature-43715) | ||