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CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies Process-Aware SRAM Design and Test /

As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cells with parametric sensitivity. Growing sizes of SRAM arrays...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Pavlov, Andrei (Autor), Sachdev, Manoj (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Dordrecht : Springer Netherlands : Imprint: Springer, 2008.
Edición:1st ed. 2008.
Colección:Frontiers in Electronic Testing ; 40
Temas:
Acceso en línea:Texto Completo