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Ferroelectricity in doped hafnium oxide : materials properties and devices /
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induce...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Duxford :
Woodhead Publishing,
[2019]
|
| Edición: | First edition. |
| Colección: | Woodhead Publishing series in electronic and optical materials.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 020 | |z 0081024304 | ||
| 020 | |z 9780081024300 | ||
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| 072 | 7 | |a TEC |x 009070 |2 bisacsh | |
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| 245 | 0 | 0 | |a Ferroelectricity in doped hafnium oxide : |b materials properties and devices / |c edited by Uwe Schroeder, Cheol Seong Hwang, Hiroshi Funakubo. |
| 250 | |a First edition. | ||
| 264 | 1 | |a Duxford : |b Woodhead Publishing, |c [2019] | |
| 300 | |a 1 online resource : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Woodhead Publishing series in electronic and optical materials | |
| 500 | |a Includes index. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. | ||
| 504 | |a Includes bibliographical references and index. | ||
| 650 | 0 | |a Metal oxide semiconductors. | |
| 650 | 0 | |a Hafnium oxide. | |
| 650 | 0 | |a Hafnium oxide |x Electric properties. | |
| 650 | 0 | |a Ferroelectricity. | |
| 650 | 6 | |a MOS (�Electronique) |0 (CaQQLa)201-0032323 | |
| 650 | 6 | |a Ferro�electricit�e. |0 (CaQQLa)201-0026319 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Ferroelectricity |2 fast |0 (OCoLC)fst00923117 | |
| 650 | 7 | |a Hafnium oxide |2 fast |0 (OCoLC)fst00950216 | |
| 650 | 7 | |a Metal oxide semiconductors |2 fast |0 (OCoLC)fst01017624 | |
| 700 | 1 | |a Schroeder, Uwe, |e editor | |
| 700 | 1 | |a Hwang, Cheol Seong, |e editor. | |
| 700 | 1 | |a Funakubo, Hiroshi, |e editor. | |
| 776 | 0 | 8 | |i Print version: |t FERROELECTRICITY IN DOPED HAFNIUM OXIDE. |d [Place of publication not identified], WOODHEAD, 2019 |z 0081024304 |w (OCoLC)1051137546 |
| 830 | 0 | |a Woodhead Publishing series in electronic and optical materials. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780081024300 |z Texto completo |