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Plasma processing for VLSI /
Plasma Processing for VLSI.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Academic Press,
1984.
|
| Colección: | VLSI electronics ;
v. 8. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
| LEADER | 00000cam a2200000 i 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn893872998 | ||
| 003 | OCoLC | ||
| 005 | 20231120111841.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 141027s1984 nyua ob 001 0 eng d | ||
| 040 | |a OPELS |b eng |e rda |e pn |c OPELS |d N$T |d YDXCP |d EBLCP |d DEBSZ |d OCLCQ |d UAB |d OCLCQ |d MERUC |d STF |d OCLCQ |d OCLCO |d OCLCQ |d OCLCO | ||
| 019 | |a 897651981 | ||
| 020 | |a 9781483217758 |q (electronic bk.) | ||
| 020 | |a 1483217752 |q (electronic bk.) | ||
| 020 | |z 0122341082 | ||
| 020 | |z 9780122341083 | ||
| 035 | |a (OCoLC)893872998 |z (OCoLC)897651981 | ||
| 050 | 4 | |a TK7874 |b .V56 v.8, 1984eb | |
| 072 | 7 | |a TEC |x 009070 |2 bisacsh | |
| 082 | 0 | 4 | |a 621.381/73 |2 22 |
| 245 | 0 | 0 | |a Plasma processing for VLSI / |c edited by Norman G. Einspruch, Dale M. Brown. |
| 264 | 1 | |a New York : |b Academic Press, |c 1984. | |
| 300 | |a 1 online resource (xiv, 527 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a VLSI electronics ; |v volume 8 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Plasma Processing forVLSI; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. The History of Plasma Processing; I. INTRODUCTION; II. EARLY DEVELOPMENTS; III. INTRODUCTION OF PLASMA PROCESSING TOSEMICONDUCTOR MANUFACTURING, 1971-1978; IV. FULL-SCALE COMMITMENT TO DRY-PROCESSTECHNOLOGY, 1978-1983; V. CHALLENGES AND OPPORTUNITIES FOR PLASMATECHNOLOGY, 1983-1988; REFERENCES; Part A: Deposition; Chapter 2. Sputtering for VLSI; I. INTRODUCTION; II. CONTACT METALLIZATION; III. DIFFUSION BARRIERS; IV. SCHOTTKY DIODE METALLIZATION; V. COSPUTTERED ALUMINUM ALLOYS. | |
| 505 | 8 | |a VI. REFRACTORY SILICIDES IN GATE METALLIZATIONVII. FILM STRESS; VIII. DIELECTRICS; IX. DIE ATTACH; X. SUMMARY AND FUTURE DIRECTIONS; REFERENCES; Chapter 3. Plasma-Enhanced Chemical Vapor Deposition of Transition Metalsand Transition MetalSuicides; I. INTRODUCTION; II. PLASMA-ENHANCED DEPOSITION; III. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 4. Plasma-Enhanced Chemical Vapor Depositionof Dielectrics; 1. INTRODUCTION; II. GENERAL PRINCIPLES; III. SPECIFIC MATERIALS; IV. EQUIPMENT FOR PECVD OF INORGANIC DIELECTRICS; V. SUMMARY; REFERENCES; Part B: Lithography; Chapter 5. Trilayer Resist. | |
| 505 | 8 | |a I. INTRODUCTIONII. PLASMA PROCESSING; III. LIMITATIONS OF SINGLE-LAYER RESIST; IV. FORMATION OF THE PROCESS ETCH MASK; V. UTILIZATION OF THE PROCESS MASK; VI. OPTIONS TO TRILAYER RESIST; VII. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 6. Plasma Sourcesfor X-Ray Lithography; I. INTRODUCTION; II. X-RAY LITHOGRAPHY; III. X-RAY SOURCE REQUIREMENTS; IV. ELECTRON-IMPACT X-RAY SOURCES; V. SYNCHROTRON X-RADIATION SOURCES; VI. PLASMA X-RAY SOURCES; VII. CONCLUSION; APPENDIX. X-RAY SOURCE CHARACTERIZATION; ACKNOWLEDGMENTS; REFERENCES; Chapter 7. Plasma Sourcesfor Deep-UV Lithography; I. INTRODUCTION. | |
| 505 | 8 | |a II. GENERAL REQUIREMENTS FOR DEEP-UVLITHOGRAPHIC SOURCESIII. DESCRIPTION OF SOURCES; IV. CONCLUSIONS; REFERENCES; Part C: Etching; Chapter 8. Basic Principles of Plasma Etchingfor Silicon Devices; I. INTRODUCTION; II. PRINCIPLE OF ISOTROPIC AND ANISOTROPIC ETCHING; III. PLASMA AND SURFACE CHEMISTRY; IV. SELECTIVITY IN PLASMA ETCHING; V. ETCHING IN PLASMAS THAT PRODUCE FREE FLUORINE; VI. ETCHING OF ORGANIC MATERIAL IN OXYGEN-BASEDPLASMAS; VII. ETCHING IN PLASMAS THAT PRODUCEFLUOROCARBON RADICALS; VIII. ETCHING IN PLASMAS THAT PRODUCE CHLORINE ANDBROMINE ATOMS; IX. HYDROGEN PLASMA ETCHING. | |
| 505 | 8 | |a ACKNOWLEDGMENTREFERENCES; Chapter 9. High-Pressure Etching; NOMENCLATURE; I. INTRODUCTION; II. EQUIPMENT; III. PLASMA PROPERTIES; IV. PROCESSES FOR SPECIFIC MATERIALS; V. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 10. Reactive Ion Etching; I. INTRODUCTION; II. GENERAL PRINCIPLES; III. PROCESS PARAMETER EFFECTS; IV. SPECIFIC MATERIALS AND STRUCTURES; V. EQUIPMENT CONSIDERATIONS; VI. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 11. Ion-Beam Etching (Milling; I. INTRODUCTION; II. PHYSICS OF ION-BEAM ETCHING; III. TECHNIQUES AND PROBLEMS OF ION-BEAM ETCHING; IV. APPLICATIONS. | |
| 520 | |a Plasma Processing for VLSI. | ||
| 650 | 0 | |a Integrated circuits |x Very large scale integration. | |
| 650 | 0 | |a Plasma (Ionized gases) |x Industrial applications. | |
| 650 | 6 | |a Circuits int�egr�es �a tr�es grande �echelle. |0 (CaQQLa)201-0117255 | |
| 650 | 6 | |a Plasma (Gaz ionis�es) |0 (CaQQLa)201-0008600 |x Applications industrielles. |0 (CaQQLa)201-0374039 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Integrated circuits |x Very large scale integration |2 fast |0 (OCoLC)fst00975602 | |
| 650 | 7 | |a Plasma (Ionized gases) |x Industrial applications |2 fast |0 (OCoLC)fst01066270 | |
| 650 | 7 | |a Gravure par plasma. |2 ram | |
| 650 | 7 | |a Lithographie par rayons X. |2 ram | |
| 650 | 7 | |a Pulv�erisation cathodique. |2 ram | |
| 650 | 7 | |a Circuits int�egr�es �a tr�es grande �echelle. |2 ram | |
| 700 | 1 | |a Einspruch, Norman G. | |
| 700 | 1 | |a Brown, Dale M. | |
| 776 | 0 | 8 | |i Print version: |t Plasma processing for VLSI |z 0122341082 |w (DLC) 83022351 |w (OCoLC)10995615 |
| 830 | 0 | |a VLSI electronics ; |v v. 8. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780122341083 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/07367031/8 |z Texto completo |