Applied solid state science. advances in materials and device research / Supplement 2, Silicon integrated circuits. Part C :

Silicon Integrated Circuits, Part 2 covers some of the most promising approaches along with the new understanding of processing-related areas of physics and chemistry. The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid iso...

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Bibliographic Details
Call Number:Libro Electrónico
Other Authors: Wolfe, Raymond (Editor), Kahng, Dawon (Editor)
Format: Electronic eBook
Language:Inglés
Published: Orlando ; London : Academic, 1985.
Series:Applied solid state science. Supplement ; 2.
Subjects:
Integrated circuits > Materials.
Solid state physics.
Circuits int�egr�es > Mat�eriaux.
Physique de l'�etat solide.
TECHNOLOGY & ENGINEERING > Mechanical.
Online Access:Texto completo
Table of Contents:
  • Front Cover; Silicon Integrated Circuits; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. Transient Thermal Processing of Silicon; I. Introduction; II. Adiabatic Annealing; III. Thermal Flux Annealing; IV. Isothermal Rapid Annealing; V. Related Rapid Thermal Processes; VI. Summary; References; Chapter 2. Reactive Ion-Beam Etching and Plasma Deposition Techniques Using Electron Cyclotron Resonance Plasmas; I. Introduction; II. Reactive Ion-Beam Etching; III. Plasma Deposition; References; Chapter 3. Physics of VLSI Processing and Process Simulation; I. Introduction.
  • II. Physics of Processing and Process SimulationIII. Conclusions and the Future; References; Author Index; Subject Index.

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