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Advances in non-volatile memory and storage technology /
Non-volatile memory retains its data when the power supply is removed and is thus invaluable for data storage. However, new solutions are needed for future development because solid-state non-volatile memory (flash), while useful, is limited. This book presents a systematic overview of the emerging...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Cambridge, UK :
Elsevier Ltd.,
[2014]
|
| Colección: | Woodhead Publishing series in electronic and optical materials ;
no. 64. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Advances in non-volatile memory and storage technology / |c edited by Yoshio Nishi. |
| 264 | 1 | |a Cambridge, UK : |b Elsevier Ltd., |c [2014] | |
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| 490 | 1 | |a Woodhead Publishing series in electronic and optical materials ; |v Number 64 | |
| 504 | |a Includes bibliographical references and index. | ||
| 520 | |a Non-volatile memory retains its data when the power supply is removed and is thus invaluable for data storage. However, new solutions are needed for future development because solid-state non-volatile memory (flash), while useful, is limited. This book presents a systematic overview of the emerging technologies designed to address this issue. After an overview of the current market, part one introduces improvements in flash technologies including developments in 3D NAND flash technologies and flash memory for ultra high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. In particular, the fabrication, properties and performance of nanowire phase change memory technologies are explained. Later chapters also consider modelling of both metal oxide and resistive random access memory switching mechanisms as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer and hybrid organic memory devices and a variety of random access memory devices such as nano-electromechanical, ferroelectric and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknessesExamines improvements to flash technology, charge trapping and resistive random access memoryDiscusses emerging devices such as those based on polymer and molecular electronics and nanoelectromechanical random access memory (RAM). | ||
| 650 | 0 | |a Nonvolatile random-access memory. | |
| 650 | 6 | |a Ordinateurs |x M�emoires vives non volatiles. |0 (CaQQLa)000289472 | |
| 650 | 7 | |a COMPUTERS |x Computer Literacy. |2 bisacsh | |
| 650 | 7 | |a COMPUTERS |x Computer Science. |2 bisacsh | |
| 650 | 7 | |a COMPUTERS |x Data Processing. |2 bisacsh | |
| 650 | 7 | |a COMPUTERS |x Hardware |x General. |2 bisacsh | |
| 650 | 7 | |a COMPUTERS |x Information Technology. |2 bisacsh | |
| 650 | 7 | |a COMPUTERS |x Machine Theory. |2 bisacsh | |
| 650 | 7 | |a COMPUTERS |x Reference. |2 bisacsh | |
| 650 | 7 | |a Nonvolatile random-access memory. |2 fast |0 (OCoLC)fst01894791 | |
| 700 | 1 | |a Nishi, Yoshio, |d 1940- |e editor. | |
| 830 | 0 | |a Woodhead Publishing series in electronic and optical materials ; |v no. 64. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780857098030 |z Texto completo |