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Applied solid state science : advances in materials and device research /
Applied Solid State Science: Advances in Materials and Device Research, Volume 3 covers reviews that are directly related to the two devices which are the epitome of applied solid state science - the transistor and the laser. The book discusses the physics of multilayer-gate IGFET memories; the appl...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York ; London :
Academic Press,
1972.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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|---|---|---|---|
| 001 | SCIDIR_ocn881851497 | ||
| 003 | OCoLC | ||
| 005 | 20231120111644.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 140627s1972 nyu o 000 0 eng d | ||
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| 066 | |c (S | ||
| 019 | |a 895430745 | ||
| 020 | |a 9781483214726 |q (electronic bk.) | ||
| 020 | |a 1483214729 |q (electronic bk.) | ||
| 020 | |z 0120029030 | ||
| 020 | |z 9780120029037 | ||
| 035 | |a (OCoLC)881851497 |z (OCoLC)895430745 | ||
| 050 | 4 | |a QC176 | |
| 082 | 0 | 4 | |a 621.3815/2 |2 22 |
| 245 | 0 | 0 | |a Applied solid state science : |b advances in materials and device research / |c edited by Raymond Wolfe. Vol. 3. |
| 264 | 1 | |a New York ; |a London : |b Academic Press, |c 1972. | |
| 300 | |a 1 online resource (xii, 403 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |6 880-01 |a Front Cover; Applied Solid State Science Advances in Materials and Device Research; Copyright Page; Table of Contents; LIST OF CONTRIBUTORS; PREFACE; CONTENTS OF PREVIOUS VOLUMES; ARTICLES PLANNED FOR FUTURE VOLUMES; Chapter 1. Physics of Multilayer-Gate IGFET Memories; I. Introduction; II. IGFET Characteristics; III. Oxide Instabilities; IV. Current Transport through Insulators; V. The Memory Element; References; Chapter 2. Acousto-optics; I. Introduction; II. General Formulation; III. Strong Interaction; IV. Weak Interaction; V. Materials; VI. Applications; VII. Special Topics; Appendix A. | |
| 505 | 8 | |a III. Frequency Dependence of the Electrooptic EffectIV. Electronic Electrooptic Effect (Nonlinear Optic Effect); V. Theory of the Electrooptic Effect; VI. Tabulation of Experimental Electrooptic Data; VII. Electrooptic Device Considerations; VIII. Conclusions; List of Symbols; Note Added in Proof; Reference; AUTHOR INDEX; SUBJECT INDEX. | |
| 520 | |a Applied Solid State Science: Advances in Materials and Device Research, Volume 3 covers reviews that are directly related to the two devices which are the epitome of applied solid state science - the transistor and the laser. The book discusses the physics of multilayer-gate IGFET memories; the application of the transient charge technique in drift velocity; and trapping in semiconductors and in materials used in xerography, nuclear particle detectors, and space-charge-limited devices; as well as thin film transistors. The text describes the manipulation of laser beams in solids and discusses. | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 2 | |a Semiconductors |0 (DNLM)D012666 | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a Semiconducteurs. |2 ram | |
| 700 | 1 | |a Wolfe, Raymond. | |
| 776 | 0 | 8 | |i Print version: |t Applied solid state science |z 0120029030 |w (OCoLC)26088952 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780120029037 |z Texto completo |
| 880 | 8 | |6 505-01/(S |a Appendix ΒReferences; Chapter 3. Drift Velocity and Trapping in Semiconductors-Transient Charge Technique; I. Introduction; II. Experimental Method; III. Drift Velocity; IV. Trapping Processes; V. Overview; Appendix A. Circuit Considerations; Appendix B. Transient Response; Appendix C. Pulse Rise Time; Appendix D. Measurement of the Energy to Create a Pair in Silicon, Germanium, and CdTe; References; Chapter 4. Electrooptical and Nonlinear Optical Properties of Crystals; I. Introduction; II. Phenomenological Description of Electrooptic Phenomena. | |