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Ion implantation technology-92 : proceedings of the Ninth International Conference on Ion Implantation Technology, Gainesvile, FL, USA, September 20-24, 1992 /
Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wi...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; New York :
North-Holland,
1993.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn838102309 | ||
| 003 | OCoLC | ||
| 005 | 20231117044845.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 130411s1993 ne a ob 101 0 eng d | ||
| 040 | |a OPELS |b eng |e pn |c OPELS |d OCLCO |d N$T |d E7B |d OCLCF |d UKDOC |d OCLCO |d YDXCP |d OCL |d OCLCO |d OCLCQ |d OCLCO |d OCLCQ |d LEAUB |d VLY |d OCLCQ |d OCLCO |d COM |d OCLCO |d OCLCQ |d OCLCO | ||
| 019 | |a 1162075349 | ||
| 020 | |a 9780444599803 |q (electronic bk.) | ||
| 020 | |a 0444599800 |q (electronic bk.) | ||
| 020 | |z 0444899944 | ||
| 020 | |z 9780444899941 | ||
| 035 | |a (OCoLC)838102309 |z (OCoLC)1162075349 | ||
| 050 | 4 | |a TK7871.85 |b .I57623 1993eb | |
| 072 | 7 | |a TEC |x 008090 |2 bisacsh | |
| 072 | 7 | |a TEC |x 008100 |2 bisacsh | |
| 082 | 0 | 4 | |a 621.3815/2 |2 22 |
| 111 | 2 | |a International Conference on Ion Implantation Technology |n (9th : |d 1992 : |c Gainesville, Fla.) | |
| 245 | 1 | 0 | |a Ion implantation technology-92 : |b proceedings of the Ninth International Conference on Ion Implantation Technology, Gainesvile, FL, USA, September 20-24, 1992 / |c editors, D.F. Downey [and others]. |
| 260 | |a Amsterdam ; |a New York : |b North-Holland, |c 1993. | ||
| 300 | |a 1 online resource (xvii, 697 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 520 | |a Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Ion Implantation Technology -- 92; Copyright Page; Editorial; Committees, sponsors and exhibitors; Session Chairmen; Table of Contents; PART I; Section I: Overviews; Chapter 1. Ion implantation in future MOS technology; 1. Introduction; 2. Trends in the MOS transistor structure; 3. Additional observations; 4. Conclusions; Acknowledgements; References; Chapter 2. Damage analysis and engineering for ion implantation in ULSI process; 1. Introduction; 2. Damage formation analysis by simulation; 3. Damage analysis techniques; 4. Damage analysis and defect engineering in ULSI process | |
| 505 | 8 | |a 5. SummaryAcknowledgements; References; Section II: New implanter systems; Chapter 3. High-voltage implantation facility at GM Research; 1. Introduction; 2. Plasma source; 3. Main plasma chamber; 4. High-voltage modulator system; 5. Experimental effort; References; Chapter 4. Performance characteristics of the Genus Inc. 1510 high energy ion implantation system; 1. Introduction; 2. System overview and performance; 3. Conclusion; Acknowledgements; References; Chapter 5.A 2 MV heavy ion Van de Graaff implanter for research and development; 1. Introduction; 2. Technical features | |
| 505 | 8 | |a 3. Measured performance4. Applications; 5. Conclusions; Acknowledgements; References; Section III: New subsystems and components; Chapter 6. Metal-sheet-beam formation using an impregnated electrode-type liquid-metal ion source with a linear array of emission points; 1. Introduction; 2. Measurement system of beam profiles; 3. Beam profiles of the extracted ion beams; 4. Design of the lens system; 5. Beam profiles of the converged ion beams; 6. Conclusion; References; Section IV: Materials science; Chapter 7. SIMOX material manufacturability; 1. Introduction; 2. Material specifications: status | |
| 505 | 8 | |a 2. Experimental3. Results and discussion; 4. Conclusions; Acknowledgements; References; Chapter 11. Defect formation in high dose oxygen implanted silicon; 1. Introduction; 2. Experimental procedures; 3. Results and discussion; 4. Summary and conclusions; Acknowledgements; References; Chapter 12. Iron gettering and doping in silicon due to MeV carbon implantation; 1. Introduction; 2. Experimental; 3. Results and discussion; 4. Conclusions; Acknowledgement; References; Chapter 13. B diffusion in Si predamaged with Si+ or Ge+ and preannealed at 200-1000�C; 1. Introduction; 2. Experiments | |
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors |v Congresses. | |
| 650 | 0 | |a Ion implantation |v Congresses. | |
| 650 | 0 | |a Semiconductor doping |v Congresses. | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318258 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 6 | |a Ions |0 (CaQQLa)201-0072132 |x Implantation |0 (CaQQLa)201-0072132 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318260 |x Dopage |0 (CaQQLa)201-0318260 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Ion implantation |2 fast |0 (OCoLC)fst00978590 | |
| 650 | 7 | |a Semiconductor doping |2 fast |0 (OCoLC)fst01112124 | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 655 | 2 | |a Congress |0 (DNLM)D016423 | |
| 655 | 7 | |a proceedings (reports) |2 aat |0 (CStmoGRI)aatgf300027316 | |
| 655 | 7 | |a Conference papers and proceedings |2 fast |0 (OCoLC)fst01423772 | |
| 655 | 7 | |a Conference papers and proceedings. |2 lcgft | |
| 655 | 7 | |a Actes de congr�es. |2 rvmgf |0 (CaQQLa)RVMGF-000001049 | |
| 700 | 1 | |a Downey, D. F. | |
| 776 | 0 | 8 | |i Print version: |a International Conference on Ion Implantation Technology (9th : 1992 : Gainesville, Fla.). |t Ion implantation technology-92. |d Amsterdam ; New York : North-Holland, 1993 |z 0444899944 |w (DLC) 93007124 |w (OCoLC)27680670 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444899941 |z Texto completo |