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Materials fundamentals of molecular beam epitaxy /
The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1993.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn817714859 | ||
| 003 | OCoLC | ||
| 005 | 20231117044754.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 121113s1993 maua ob 001 0 eng d | ||
| 040 | |a OPELS |b eng |e pn |c OPELS |d N$T |d IDEBK |d E7B |d OCLCF |d UIU |d YDXCP |d OCLCQ |d LEAUB |d LUN |d OCLCQ |d OCLCO |d S2H |d OCLCO |d N$T |d COM |d OCLCO |d OCLCQ |d OCL | ||
| 020 | |a 9780127016252 |q (electronic bk.) | ||
| 020 | |a 0127016252 |q (electronic bk.) | ||
| 020 | |z 9780080571355 | ||
| 020 | |z 0080571352 | ||
| 020 | |z 0127016252 | ||
| 020 | |z 9780127016252 | ||
| 035 | |a (OCoLC)817714859 | ||
| 050 | 4 | |a QC611.6.M64 |b T78 1993eb | |
| 072 | 7 | |a TEC |x 027000 |2 bisacsh | |
| 082 | 0 | 4 | |a 620/.44 |2 22 |
| 084 | |a 33.61 |2 bcl | ||
| 084 | |a 51.20 |2 bcl | ||
| 084 | |a UQ 2200 |2 rvk | ||
| 084 | |a ELT 280f |2 stub | ||
| 100 | 1 | |a Tsao, Jeffrey Y. | |
| 245 | 1 | 0 | |a Materials fundamentals of molecular beam epitaxy / |c Jeffrey Y. Tsao. |
| 260 | |a Boston : |b Academic Press, |c �1993. | ||
| 300 | |a 1 online resource (xxi, 301 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 520 | |a The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy. Thorough enough to benefit molecular beam epitaxy researchers. Broad enough to benefit materials, surface, and device researchers. Referenes articles at the forefront of modern research as well as those of historical interest. | ||
| 588 | 0 | |a Print version record. | |
| 650 | 0 | |a Molecular beam epitaxy. | |
| 650 | 0 | |a Surfaces (Physics) | |
| 650 | 0 | |a Surfaces (Technology) | |
| 650 | 0 | |a Epitaxy. | |
| 650 | 0 | |a Molecular beams. | |
| 650 | 6 | |a �Epitaxie. |0 (CaQQLa)201-0077948 | |
| 650 | 6 | |a Faisceaux mol�eculaires. |0 (CaQQLa)201-0006718 | |
| 650 | 6 | |a Surfaces (Physique) |0 (CaQQLa)201-0050017 | |
| 650 | 6 | |a Surfaces (Technologie) |0 (CaQQLa)201-0031190 | |
| 650 | 6 | |a �Epitaxie par jets mol�eculaires. |0 (CaQQLa)201-0282349 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Nanotechnology & MEMS. |2 bisacsh | |
| 650 | 7 | |a Molecular beams. |2 fast |0 (OCoLC)fst01024730 | |
| 650 | 7 | |a Epitaxy. |2 fast |0 (OCoLC)fst00914372 | |
| 650 | 7 | |a Molecular beam epitaxy. |2 fast |0 (OCoLC)fst01024729 | |
| 650 | 7 | |a Surfaces (Physics) |2 fast |0 (OCoLC)fst01139265 | |
| 650 | 7 | |a Surfaces (Technology) |2 fast |0 (OCoLC)fst01139278 | |
| 650 | 7 | |a Molekularstrahlepitaxie |2 gnd |0 (DE-588)4170399-6 | |
| 650 | 7 | |a Festk�orperoberfl�ache |2 gnd |0 (DE-588)4127823-9 | |
| 650 | 1 | 7 | |a Moleculaire-bundelepitaxie. |2 gtt |
| 650 | 7 | |a �Epitaxie par faisceaux mol�eculaires. |2 ram | |
| 650 | 7 | |a Surfaces (physique) |2 ram | |
| 650 | 7 | |a Surfaces (technologie) |2 ram | |
| 776 | 0 | 8 | |i Print version: |a Tsao, Jeffrey Y. |t Materials fundamentals of molecular beam epitaxy. |d Boston : Academic Press, �1993 |w (DLC) 92033038 |w (OCoLC)26720166 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780080571355 |z Texto completo |